Справочник MOSFET. FDMS3604S

 

FDMS3604S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDMS3604S

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 2.2 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 13 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 21 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm

Тип корпуса: PQFN5X6

Аналог (замена) для FDMS3604S

 

 

FDMS3604S Datasheet (PDF)

1.1. fdms3604s.pdf Size:602K _fairchild_semi

FDMS3604S
FDMS3604S

January 2015 FDMS3604S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description This device includes two specialized N-Channel MOSFETs in a Q1: N-Channel dual PQFN package. The switch node has been internally Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 mΩ at VGS = 4.5 V

2.1. fdms3604as.pdf Size:582K _fairchild_semi

FDMS3604S
FDMS3604S

March 2011 FDMS3604AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m? at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m? at VGS = 4.5 V, ID =

 3.1. fdms3600s.pdf Size:384K _fairchild_semi

FDMS3604S
FDMS3604S

October 2010 FDMS3600S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 m? N-Channel: 25 V, 40 A, 1.6 m? Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m? at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous

3.2. fdms3606as.pdf Size:582K _fairchild_semi

FDMS3604S
FDMS3604S

April 2011 FDMS3606AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m? at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m? at VGS = 4.5 V, ID =

 3.3. fdms3602as.pdf Size:557K _fairchild_semi

FDMS3604S
FDMS3604S

March 2011 FDMS3602AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 mΩ at VGS = 4.5

3.4. fdms3602s.pdf Size:585K _fairchild_semi

FDMS3604S
FDMS3604S

March 2011 FDMS3602S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m? at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.1 m? at VGS = 4.5 V, ID

 3.5. fdms3606s.pdf Size:543K _fairchild_semi

FDMS3604S
FDMS3604S

December 2012 FDMS3606S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 mΩ at VGS = 4.5

3.6. fdms3600as.pdf Size:565K _fairchild_semi

FDMS3604S
FDMS3604S

April 2011 FDMS3600AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 mΩ at VGS = 4.5

Другие MOSFET... FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , IRF1010E , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL , FDMS3600AS , GWM120-0075X1-SMD , FDMS0310S , GWM160-0055X1-SL , FDMS0302S .

 

 
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Список транзисторов

Обновления

MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |
 

 

 

 

 
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