FDMS3602AS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDMS3602AS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm
Тип корпуса: PQFN5X6
Аналог (замена) для FDMS3602AS
FDMS3602AS Datasheet (PDF)
fdms3602as.pdf

March 2011FDMS3602ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 m at VGS = 4.5
fdms3602s.pdf

March 2011FDMS3602SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.1 m at VGS = 4.5
fdms3600as.pdf

April 2011FDMS3600ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 m at VGS = 4.5
fdms3606s.pdf

December 2012FDMS3606SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5
Другие MOSFET... FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , 10N65 , GWM120-0075X1-SL , FDMS3600AS , GWM120-0075X1-SMD , FDMS0310S , GWM160-0055X1-SL , FDMS0302S , GWM160-0055X1-SMD , FCP190N65F .
History: SWF20N65D | SFD082N68C2 | 3N210 | IPP020N06N | ELM34415AA | IPL60R065C7 | SSF80R380S
History: SWF20N65D | SFD082N68C2 | 3N210 | IPP020N06N | ELM34415AA | IPL60R065C7 | SSF80R380S



Список транзисторов
Обновления
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
c1061 transistor | 2sc1451 | c3199 transistor | 2n2712 datasheet | 2sc2525 | tip73 | 2n3392 | 2n2369a