IXFA12N50P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXFA12N50P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 200 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5.5 V
Максимально допустимый постоянный ток стока |Id|: 12 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 29 nC
Время нарастания (tr): 200 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.5 Ohm
Тип корпуса: TO263
Аналог (замена) для IXFA12N50P
IXFA12N50P Datasheet (PDF)
ixfp12n65x2m ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf
X2-Class HiPERFET VDSS = 650VIXFA12N65X2Power MOSFET ID25 = 12AIXFP12N65X2 RDS(on) 310m IXFH12N65X2N-Channel Enhancement ModeAvalanche RatedTO-263 (IXFA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXFP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVGSM Tr
ixfa14n60p3 ixfh14n60p3.pdf
Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFA14N60P3Power MOSFETs ID25 = 14AIXFP14N60P3 RDS(on) 540m IXFH14N60P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 15
ixfa16n50p ixfh16n50p ixfp16n50p.pdf
IXFA 16N50P VDSS = 500 VPolarHVTM HiPerFETIXFH 16N50P ID25 = 16 APower MOSFETIXFP 16N50P RDS(on) 400 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V
ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf
Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFA16N60P3Power MOSFETs ID25 = 16AIXFP16N60P3 RDS(on) 440m IXFH16N60P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 15
ixfa14n60p ixfh14n60p ixfp14n60p.pdf
IXFA 14N60P VDSS = 600 VPolarHVTM HiPerFETIXFH 14N60P ID25 = 14 APower MOSFET IXFP 14N60P RDS(on) 550 m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-263 (IXFA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S(TAB)VGS Continuous 30 VV
ixfa180n10t2 ixfp180n10t2.pdf
Preliminary Technical InformationTrenchT2TM HiperFETTM VDSS = 100VIXFA180N10T2Power MOSFET ID25 = 180AIXFP180N10T2 RDS(on) 6m N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VTO-220AB (IXFP)VDGR TJ = 25C to 175C, RG
ixfa18n65x2 ixfp18n65x2 ixfh18n65x2.pdf
X2-Class HiPerFETTM VDSS = 650VIXFA18N65X2Power MOSFET ID25 = 18AIXFP18N65X2 RDS(on) 200m IXFH18N65X2N-Channel Enhancement ModeAvalanche RatedTO-263(IXFA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220VDSS TJ = 25C to 150C 650 V(IXFP)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVGS
ixfa18n60x ixfh18n60x ixfp18n60x.pdf
Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA18N60XPower MOSFET ID25 = 18AIXFP18N60X RDS(on) 230m IXFH18N60XTO-263 AA (IXFA)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to
ixfa110n15t2 ixfp110n15t2.pdf
Preliminary Technical InformationTrenchT2TM HiperFET VDSS = 150VIXFA110N15T2ID25 = 110APower MOSFETIXFP110N15T2 RDS(on) 13m N-Channel Enhancement ModeAvalanche RatedTO-263GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 175C 150 V(TAB)VDGR TJ = 25C to 175C, RGS = 1M 150 VTO-220VGSS Continuous 20 VVGSM T
ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf
Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFA16N50P3Power MOSFETs ID25 = 16AIXFP16N50P3 RDS(on) 360m IXFH16N50P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 15
ixfa180n10t2.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFA180N10T2FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAX
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