IXFA3N120 - описание и поиск аналогов

IXFA 3N120 VDSS =1200 V HiPerFETTM IXFP 3N120 ID25 = 3 A Power MOSFETs RDS(on) = 4.5 trr 300 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V D (TAB) VGS Conti

VDSS = 200V X3-Class HiPERFETTM IXFY36N20X3 ID25 = 36A Power MOSFET IXFA36N20X3 RDS(on) 45m IXFP36N20X3 N-Channel Enhancement Mode TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V G S VDGR TJ = 25 C to 150 C, RGS = 1M 200 V D (Tab) VGSS Continuous 20 V TO-220

Advance Technical Information X-Class HiPerFETTM VDSS = 600V IXFA30N60X Power MOSFET ID25 = 30A IXFP30N60X RDS(on) 155m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C, RGS = 1M

X2-Class HiPerFETTM VDSS = 650V IXFA34N65X2 Power MOSFET ID25 = 34A IXFP34N65X2 RDS(on) 100m IXFH34N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGS

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFA34N65X2 FEATURES With TO-263(D2PAK) packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain