IXFH20N100P - описание и поиск аналогов

X-Class HiPerFETTM VDSS = 850V IXFP20N85X Power MOSFET ID25 = 20A IXFH20N85X RDS(on) 330m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25 C to 150 C 850 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 850 V TO-247 (IXFH) VGSS Continuous 30 V VGSM Transient 4

X-Class HiPerFETTM VDSS = 850V IXFA20N85XHV Power MOSFET ID25 = 20A IXFP20N85X RDS(on) 330m IXFH20N85X N-Channel Enhancement Mode TO-263HV Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 850 V VDGR TJ = 25 C to 150 C, RGS = 1M 850 V VGSS Continuo

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA20N50P3 ID25 = 20A Power MOSFETs IXFP20N50P3 RDS(on) 300m IXFQ20N50P3 N-Channel Enhancement Mode IXFH20N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

IXFH 20N60Q VDSS = 600 V HiPerFETTM IXFT 20N60Q ID25 = 20 A Power MOSFETs RDS(on) = 0.35 Q-Class trr 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS C

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 2

IXFH20N80Q VDSS = 800 V HiPerFETTM IXFK20N80Q ID25 = 20 A Power MOSFETs IXFT20N80Q RDS(on) = 0.42 Q-Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, High dv/dt Preliminary Data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800

IXFH 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFT 20N80P ID25 = 20 A Power MOSFET IXFV 20N80P RDS(on) 520 m N-Channel Enhancement Mode IXFV 20N80PS trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFH20N85X FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source