IXFH42N60P3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXFH42N60P3
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 830 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 78 nC
trⓘ - Время нарастания: 250 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.185 Ohm
Тип корпуса: TO247
Аналог (замена) для IXFH42N60P3
IXFH42N60P3 Datasheet (PDF)
ixfh42n20 ixfm42n20 ixfh58n20 ixfm58n20 ixft50n20 ixfh50n20 ixfm50n20 ixft58n20.pdf
VDSS ID25 RDS(on)HiPerFETTMPower MOSFETs 200 V 42 A 60mWIXFH/IXFM42N20200 V 50 A 45mWIXFH/IXFM/IXFT50N20200 V 58 A 40mWIXFH/IXFT58N20N-Channel Enhancement Modetrr 200 nsHigh dv/dt, Low trr, HDMOSTM FamilyTO-247 AD (IXFH)(TAB)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 MW 200 V TO-268 (D3) Case StyleVG
ixfh42n50p2 ixft42n50p2.pdf
Advance Technical InformationPolarP2TM HiperFETTM VDSS = 500VIXFH42N50P2ID25 = 42APower MOSFETIXFT42N50P2 RDS(on) 145m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GDSymbol Test Conditions Maximum Ratings D (Tab)SVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VTO-268 (IXF
ixft40n85xhv ixfh40n85x.pdf
Advance Technical InformationX-Class HiPerFETTM VDSS = 850VIXFT40N85XHVPower MOSFET ID25 = 40AIXFH40N85X RDS(on) 145m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXFT)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 850 V D (Tab)VDGR TJ = 25C to 150C, RGS = 1M 850 VTO-
ixfh4n100q ixft4n100q.pdf
IXFH 4N100Q VDSS = 1000 VHiPerFETTMIXFT 4N100Q ID25 = 4 APower MOSFETsRDS(on) = 3.0 WQ-Classtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 MW 1000 VVGS Continuous 20 VG(TAB)DVGSM Transient
ixfh44n50p ixfk44n50p ixft44n50p.pdf
IXFH 44N50P VDSS = 500 VPolarHVTM HiPerFETIXFK 44N50P ID25 = 44 APower MOSFETIXFT 44N50P RDS(on) 140 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25 C to 175 C; RGS = 1 M 500
ixfh35n30 ixfh40n30 ixfm35n30 ixfm40n30.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 35 N30 300 V 35 A 100 mWPower MOSFETsIXFH 40 N30 300 V 40 A 85 mWIXFM 40 N30 300 V 40 A 88 mWN-Channel Enhancement Modetrr 200 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 V(TAB)VGS Continuous 20 VVGSM Trans
ixfh46n65x2.pdf
Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFH46N65X2Power MOSFET ID25 = 46A RDS(on) 76m N-Channel Enhancement ModeAvalanche RatedTO-247Fast Intrinsic DiodeGDSymbol Test Conditions Maximum RatingsSD (Tab)VDSS TJ = 25C to 150C 650 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 650 VS =
ixfh46n30t ixft46n30t.pdf
Advance Technical InformationTrenchTM HiperFETTM VDSS = 300VIXFH46N30TPower MOSFET ID25 = 46AIXFT46N30T RDS(on) 80m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-247 (IXFH)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 300 V DD (Tab)SVDGR TJ = 25C to 150C, RGS = 1M 300 VVG
ixfh40n30q ixft40n30q.pdf
IXFH 40N30QHiPerFETTMVDSS = 300 VIXFT 40N30QPower MOSFETs ID25 = 40 AQ-Class RDS(on) = 80 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary data sheetTO-268 (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 VVGS Continuous 20 VG(TAB)VGSM Transie
ixfh44n50q3.pdf
Advance Technical InformationHiperFETTM V = 500VIXFT44N50Q3DSSPower MOSFETs ID25 = 44AIXFH44N50Q3 Q3-Class RDS(on) 140m trr 250nsN-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-247 (IXFH)VDG
ixfh40n50q ixft40n50q.pdf
Advanced Technical InformationIXFH 40N50Q VDSS = 500 VHiPerFETTMIXFT 40N50Q ID25 = 40 APower MOSFETsRDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500
ixfh400n075t2-ixft400n075t2.pdf
Advance Technical InformationTrenchT2TM HiperFETTM VDSS = 75VIXFH400N075T2ID25 = 400APower MOSFETIXFT400N075T2 RDS(on) 2.3m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSS Con
ixfh44n50p.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFH44N50PFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ixfh46n65x2.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFH46N65X2FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
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