IXFK160N30T datasheet, подбор замены

 ..1. Size:138K  ixys
 ixfk160n30t ixfx160n30t.pdf 

Advance Technical Information GigaMOSTM VDSS = 300V IXFK160N30T ID25 = 160A Power MOSFET IXFX160N30T RDS(on) 19m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to 150 C, RGS = 1M 30

 9.1. Size:395K  ixys
 ixfk110n20 ixfk120n20 ixfn110n20 ixfn120n20.pdf 

This datasheet has been downloaded from http //www.digchip.com at this page

 9.2. Size:252K  ixys
 ixfh150n15p ixfk150n15p.pdf 

IXFH 150N15P PolarHTTM HiPerFET VDSS = 150 V IXFK 150N15P Power MOSFET ID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Fast Intrinsic Diode trr 200 ns Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VGS Contin

 9.3. Size:131K  ixys
 ixfk150n30p3 ixfx150n30p3.pdf 

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFK150N30P3 Power MOSFETs ID25 = 150A IXFX150N30P3 RDS(on) 19m trr 250ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 300 V Tab VDGR TJ = 25 C to 150

 9.4. Size:47K  ixys
 ixfk150n15 ixfx150n15.pdf 

HiPerFETTM IXFK 150N15 VDSS = 150 V IXFX 150N15 ID25 = 150 A Power MOSFETs RDS(on) = 12.5 mW Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 150 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET chip capability) 150

 9.5. Size:159K  ixys
 ixfk120n65x2 ixfx120n65x2.pdf 

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFK120N65X2 Power MOSFET ID25 = 120A IXFX120N65X2 RDS(on) 24m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS

 9.6. Size:131K  ixys
 ixfk120n30p3 ixfx120n30p3.pdf 

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFK120N30P3 Power MOSFETs ID25 = 120A IXFX120N30P3 RDS(on) 27m trr 250ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 300 V Tab VDGR TJ = 25 C to 150

 9.7. Size:159K  ixys
 ixfk100n65x2 ixfx100n65x2.pdf 

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFK100N65X2 Power MOSFET ID25 = 100A IXFX100N65X2 RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS

 9.8. Size:138K  ixys
 ixfk180n25t ixfx180n25t.pdf 

Advance Technical Information GigaMOSTM VDSS = 250V IXFK180N25T ID25 = 180A Power MOSFET IXFX180N25T RDS(on) 12.9m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V G VDGR TJ = 25 C to 150 C, RGS = 1M

 9.9. Size:123K  ixys
 ixfk120n25p ixfx120n25p.pdf 

VDSS = 250 V IXFK 120N25P PolarHTTM HiPerFET ID25 = 120 A IXFX 120N25P Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 250 V TO-264 (IXFK) VDGR TJ = 25 C to 175 C; RGS = 1 M 250 V VGS Continuous

 9.10. Size:96K  ixys
 ixfx100n25 ixfk100n25.pdf 

IXFX 100N25 VDSS = 250 V HiPerFETTM IXFK 100N25 ID25 = 100 A Power MOSFETs RDS(on) = 27 m Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET c

 9.11. Size:138K  ixys
 ixfk140n25t ixfx140n25t.pdf 

Advance Technical Information GigaMOSTM VDSS = 250V IXFK140N25T ID25 = 140A Power MOSFET IXFX140N25T RDS(on) 17m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V G D VDGR TJ = 25 C to 150 C, RGS = 1M

 9.12. Size:46K  ixys
 ixfk180n085 ixfx180n085.pdf 

Advanced Technical Information HiPerFETTM IXFK 180N085 VDSS = 85 V IXFX 180N085 ID25 = 180 A Power MOSFETs RDS(on) = 7 mW Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET chip capability) 1

 9.13. Size:117K  ixys
 ixfk100n10 ixfn150n10.pdf 

VDSS ID25 RDS(on) HiPerFETTM IXFK100N10 100 V 100 A 12 mW Power MOSFETs IXFN150N10 100 V 150 A 12 mW trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 100 100 V G (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 100 V D S VGS Continuous 20 20 V miniBLOC, SOT

 9.14. Size:80K  ixys
 ixfk180n07 ixfx180n07.pdf 

IXFK 180N07 VDSS = 70 V HiPerFETTM IXFX 180N07 ID25 = 180 A Power MOSFETs RDS(on) = 6 m Single MOSFET Die trr 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings PLUS 247TM VDSS TJ = 25 C to 150 C70 V VDGR TJ = 25 C to 150 C; RGS = 1 M 70 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 2

 9.15. Size:144K  ixys
 ixfk170n10 ixfn170n10.pdf 

VDSS ID25 RDS(on) trr HiPerFETTM IXFN170N10 100V 170A 10mW 200ns Power MOSFET IXFK170N10 100V 170A 10mW 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 G D (TAB) VDSS TJ = 25 C to 150 C 100 100 V D S VDGR TJ = 25 C to 150 C 100 100 V VGS Continuous 20 20 V VGSM Transient 30 30 V miniBLOC, SO

 9.16. Size:132K  ixys
 ixfk102n30p.pdf 

Preliminary Technical Information VDSS = 300 V IXFK 102N30P PolarHTTM HiPerFET ID25 = 102 A Power MOSFET RDS(on) 33 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS =

 9.17. Size:178K  ixys
 ixfk180n15p ixfx180n15p.pdf 

VDSS = 150 V IXFK 180N15P PolarTM HiPerFET ID25 = 180 A IXFX 180N15P Power MOSFET RDS(on) 11 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDS Continuous 20 V TO

 9.18. Size:156K  ixys
 ixfk110n06 ixfk105n07 ixfk110n07.pdf 

VDSS ID25 RDS(on) HiPerFETTM IXFK 110 N06 60 V 110 A 6 mW Power MOSFETs IXFK 105 N07 70 V 105 A 7 mW IXFK 110 N07 70 V 110 A 6 mW N-Channel Enhancement Mode trr 250 ns Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) VDSS TJ = 25 C to 150 C N07 70 V N06 60 V VDGR TJ = 25 C to 150 C; RGS = 1 MW N07 70 V N06 60 V VGS Continuous 2

 9.19. Size:96K  ixys
 ixfk100n25.pdf 

IXFX 100N25 VDSS = 250 V HiPerFETTM IXFK 100N25 ID25 = 100 A Power MOSFETs RDS(on) = 27 m Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET c

 9.20. Size:142K  ixys
 ixfh170n10p ixfk170n10p.pdf 

PolarTM HiperFETTM VDSS = 100V IXFH170N10P ID25 = 170A Power MOSFET IXFK170N10P RDS(on) 9m trr 150ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 175 C 100 V Tab S VDGR TJ = 25 C to 175 C, RGS = 1M 100 V VGSS Conti

 9.21. Size:1919K  ixys
 ixfx120n20 ixfk120n20.pdf 

HiPerFETTM IXFX 120N20 VDSS = 200 V IXFK 120N20 ID25 = 120 A Power MOSFETs RDS(on) = 17 m Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGS Continuous 20 V (TAB) G VGSM Transient 30 V D I

 9.22. Size:225K  ixys
 ixfk140n20p.pdf 

VDSS = 200 V IXFK 140N20P PolarHTTMHiPerFET ID25 = 140 A Power MOSFET RDS(on) 18 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V VGS Continous 20 V V

 9.23. Size:123K  ixys
 ixfx170n20t ixfk170n20t.pdf 

Advance Technical Information GigaMOSTM VDSS = 200V IXFK170N20T ID25 = 170A Power MOSFET IXFX170N20T RDS(on) 11m trr 200ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 200 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS =

 9.24. Size:139K  ixys
 ixfk120n30t ixfx120n30t.pdf 

Advance Technical Information GigaMOSTM VDSS = 300V IXFK120N30T ID25 = 120A Power MOSFET IXFX120N30T RDS(on) 24m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G D VDGR TJ = 25 C to 150 C, RGS = 1M

 9.25. Size:112K  ixys
 ixfk100n20 ixfn90n20 ixfn106n20.pdf 

VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25 C to 150 C 200 200 200 V G (TAB) VDGR TJ = 25 C t

 9.26. Size:109K  ixys
 ixfk180n10 ixfx180n10.pdf 

HiPerFETTM IXFK 180N10 VDSS = 100 V IXFX 180N10 ID25 = 180 A Power MOSFETs RDS(on) = 8 mW Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D ID25 TC = 25 C (MOSFET chip capability) 180 A

 9.27. Size:332K  inchange semiconductor
 ixfk180n07.pdf 

isc N-Channel MOSFET Transistor IXFK180N07 FEATURES Drain Current I = 180A@ T =25 D C Drain Source Voltage V = 70V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen