Справочник MOSFET. 2N6770

 

2N6770 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2N6770
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 600 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO204

 Аналог (замена) для 2N6770

 

 

2N6770 Datasheet (PDF)

 ..1. Size:137K  1
 2n6770.pdf

2N6770 2N6770

 ..2. Size:144K  international rectifier
 2n6770 irf450.pdf

2N6770 2N6770

PD - 90330FREPETITIVE AVALANCHE AND dv/dt RATED IRF450HEXFETTRANSISTORS JANTX2N6770THRU-HOLE (TO-204AA/AE) JANTXV2N6770500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF450 500V 0.400 12AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestS

 ..3. Size:64K  omnirel
 2n6764 2n6766 2n6768 2n6770.pdf

2N6770 2N6770

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE,QUALIFIED TO MIL-PRF-19500/543100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/543DESCRIPTION

 9.1. Size:82K  inchange semiconductor
 2n6771 2n6772 2n6773.pdf

2N6770 2N6770

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6771/6772/6773 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- 2N6771 = 350V(Min)- 2N6772 = 400V(Min)- 2N6773 High Switching Speed Low Saturation Voltage APPLICATIONSDesigned for use in off-line power supplies and is also well suited for use in a wide

 9.2. Size:189K  inchange semiconductor
 2n6773.pdf

2N6770 2N6770

isc Silicon NPN Power Transistors 2N6773DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in off-line power supplies and is also wellsuited for use in a wide range of inverter or converter cir

 9.3. Size:187K  inchange semiconductor
 2n6772.pdf

2N6770 2N6770

isc Silicon NPN Power Transistors 2N6772DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in off-line power supplies and is also wellsuited for use in a wide range of inverter or converter cir

 9.4. Size:190K  inchange semiconductor
 2n6771.pdf

2N6770 2N6770

isc Silicon NPN Power Transistors 2N6771DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in off-line power supplies and is also wellsuited for use in a wide range of inverter or converter cir

Другие MOSFET... 2N6767 , 2N6768 , 2N6768JAN , 2N6768JANTX , 2N6768JANTXV , 2N6768JTX , 2N6768JTXV , 2N6769 , AO3407 , 2N6770JANTX , 2N6770JANTXV , 2N6770JTX , 2N6770JTXV , 2N6781 , 2N6781LCC4 , 2N6781-SM , 2N6782 .

 

 
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