IXFN64N50P - параметры транзистора MOSFET, его аналоги, datasheet

IXFN64N50P Datasheet (PDF)

..1. Size:144K ixys
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IXFN 64N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 61 APower MOSFET RDS(on) 85 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 150 C 500 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VG

7.1. Size:148K ixys
ixfn64n60p.pdf pdf_icon

VDSS = 600 VIXFN 64N60PPolarHVTM HiPerFETID25 = 50 APower MOSFET RDS(on) 96 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeminiBLOC, SOT-227 B (IXFN)E153432SSymbol Test Conditions Maximum Ratings GVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VS

9.1. Size:145K ixys
ixfn60n80p.pdf pdf_icon

IXFN 60N80PVDSS = 800 VPolarHVTM HiPerFETID25 = 53 APower MOSFET RDS(on) 140 m trr 250 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 150 C 800 VSGVDGR TJ = 25 C to 150 C; RGS = 1 M

9.2. Size:71K ixys
ixfn60n60.pdf pdf_icon

IXFN 60N60HiPerFETTM VDSS = 600 VID25 = 60 APower MOSFETsRDS(on) = 75 mWSingle Die MOSFETDN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrGPreliminary dataSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 600 VSVDGR TJ = 25C to 150C; RGS = 1 MW 600 VGVGS Continuous 20 VVGSM Transient

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