IXFN82N60P - параметры транзистора MOSFET, его аналоги, datasheet

IXFN82N60P Datasheet (PDF)

..1. Size:152K ixys
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IXFN 82N60PVDSS = 600 VPolarHVTM HiPerFETID25 = 82 APower MOSFET RDS(on) 75 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 150 C 600 VSGVDGR TJ = 25 C to 150 C; RGS = 1 M 600

9.1. Size:157K ixys
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IXFN 80N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 66 APower MOSFET RDS(on) 65 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VS

9.2. Size:572K ixys
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IXFN 80N50 VDSS = 500 VHiPerFETTMID25 = 80 APower MOSFETsRDS(on) = 55 mSingle Die MOSFETD trr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrGSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 500 VSVDGR TJ = 25C to 150C; RGS = 1 M 500 VG

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