IXFR30N60P - параметры транзистора MOSFET, его аналоги, datasheet

IXFR30N60P Datasheet (PDF)

..1. Size:135K ixys
ixfc30n60p ixfr30n60p.pdf pdf_icon

IXFC 30N60P VDSS = 600 VPolarHVTM HiPerFETIXFR 30N60P ID25 = 15 APower MOSFET RDS(on) 250 m Electrically Isolated Back Surfacetrr 250 nsN-Channel Enhancement ModeFast Recovery DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)VDSS TJ = 25C to 150C 600 VE153432VDGR TJ = 25C to

7.1. Size:91K ixys
ixfr30n50q ixfr32n50q.pdf pdf_icon

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsISOPLUS247TM IXFR 30N50Q 500 V 29 A 0.16 WIXFR 32N50Q 500 V 30 A 0.15 W(Electrically Isolated Back Surface)trr 250 nsN-Channel Enhancement ModeHigh dV/dt, Low trr, HDMOSTM FamilyPreliminary dataISOPLUS 247TMSymbol Test Conditions Maximum RatingsE 153432VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 V

9.1. Size:59K ixys
ixfr34n80.pdf pdf_icon

IXFR 34N80 VDSS = 800 VHiPerFETTM Power MOSFETsISOPLUS247TM ID25 = 28 A(Electrically Isolated Backside)RDS(on) = 0.24 trr 250 ns Single MOSFET DieAvalanche RatedPreliminary Data SheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS

9.2. Size:248K ixys
ixfc36n50p ixfr36n50p.pdf pdf_icon

IXFC 36N50P VDSS = 500 VPolarHVTM HiPerFETIXFR 36N50P ID25 = 19 APower MOSFET RDS(on) 190 m (Electrically Isolated Back Surface)trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)E153432VDSS TJ = 25 C to 150 C 500 VVDGR TJ