IXFX220N15P
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Наименование прибора: IXFX220N15P
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1250
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 220
A
Qgⓘ -
Общий заряд затвора: 162
nC
trⓘ -
Время нарастания: 200
ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009
Ohm
Тип корпуса:
PLUS247
Аналог (замена) для IXFX220N15P
IXFX220N15P
Datasheet (PDF)
..1. Size:126K ixys
ixfx220n15p ixfk220n15p.pdf 
PolarTM Power MOSFET VDSS = 150VIXFK220N15PID25 = 220AHiperFETTMIXFX220N15P RDS(on) 9m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-264 (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 150 V DSVDGR TJ = 25C to 175C, RGS = 1M 150 VTabVGSS Conti
9.1. Size:122K ixys
ixfk260n17t ixfx260n17t.pdf 
Advance Technical InformationGigaMOSTM VDSS = 170VIXFK260N17TID25 = 260APower MOSFETIXFX260N17T RDS(on) 6.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 170 VD(TAB)SVDGR TJ = 25C to 175C, RGS =
9.2. Size:251K ixys
ixfk26n90 ixfx26n90 ixfk25n90 ixfx25n90.pdf 
www.DataSheet4U.comVDSS IDSS RDS(on) trrHiPerFETTM Power MOSFETsIXFK/IXFX 26N90 900 V 26 A 0.30 W 250 nsIXFK/IXFX 25N90 900 V 25 A 0.33 W 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 V (TAB)GVGSM Transient 30 VDSID2
9.3. Size:124K ixys
ixfk24n100q3 ixfx24n100q3.pdf 
Advance Technical InformationHiperFETTM VDSS = 1000VIXFK24N100Q3Power MOSFETs ID25 = 24AIXFX24N100Q3 Q3-Class RDS(on) 440m trr 300nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic Rectifier TO-264 (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 1000 V DSVDGR TJ = 25C to 150
9.4. Size:139K ixys
ixfk230n20t ixfx230n20t.pdf 
Advance Technical InformationGigaMOSTM VDSS = 200VIXFK230N20TID25 = 230APower MOSFETIXFX230N20T RDS(on) 7.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 200 VGDVDGR TJ = 25C to 175C, RGS = 1M
9.5. Size:144K ixys
ixfk27n80q ixfx27n80q.pdf 
VDSS = 800 VHiPerFETTM IXFK 27N80QIXFX 27N80QID25 = 27 APower MOSFETsRDS(on) = 320 mQ-CLASS trr 250 ns Single MOSFET DieN-Channel Enhancement ModeAvalanche Rated, Low Qg,High dV/dt, Low trrSymbol Test Conditions Maximum RatingsPLUS 247TM (IXFX)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 V
9.6. Size:104K ixys
ixfk26n60q ixfx26n60q.pdf 
IXFK 26N60Q VDSS = 600 VHiPerFETTMIXFX 26N60Q ID25 = 26 APower MOSFETsRDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary DataSymbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Conti
9.7. Size:133K ixys
ixfk24n100 ixfx24n100.pdf 
VDSS = 1000VHiPerFETTM PowerIXFK24N100ID25 = 24AMOSFETsIXFX24N100 RDS(on) 390m t 250nsrrN-Channel Enhancement ModeAvalanche RatedFast Intrisic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VG (T
9.8. Size:113K ixys
ixfk200n10p ixfx200n10p.pdf 
VDSS = 100 VIXFK 200N10PPolarTM HiPerFETID25 = 200 AIXFX 200N10PPower MOSFET RDS(on) 7.5 m N-Channel Enhancement Modetrr 150 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGS Continuous 20
9.9. Size:123K ixys
ixfk210n17t ixfx210n17t.pdf 
Advance Technical InformationGigaMOSTM VDSS = 170VIXFK210N17TID25 = 210APower MOSFETIXFX210N17T RDS(on) 7.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 170 VD(TAB)SVDGR TJ = 25C to 175C, RGS =
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