IXFX420N10T datasheet, подбор замены

 ..1. Size:181K  ixys
 ixfk420n10t ixfx420n10t.pdf 

Advance Technical Information GigaMOSTM Trench VDSS = 100V IXFK420N10T HiperFETTM ID25 = 420A IXFX420N10T RDS(on) 2.6m Power MOSFET trr 140ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 100 V TAB D S VDGR TJ = 25 C

 ..2. Size:261K  inchange semiconductor
 ixfx420n10t.pdf 

isc N-Channel MOSFET Transistor IXFX420N10T FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V G

 9.1. Size:233K  ixys
 ixfk44n80p ixfx44n80p.pdf 

PolarTM IXFK44N80P VDSS = 800V HiperFETTM ID25 = 44A IXFX44N80P Power MOSFET RDS(on) 190m N-Channel Enhancement Mode TO-264 (IXFK) Avalanche Rated Fast Intrinsic Diode G D S Symbol Test Conditions Maximum Ratings Tab VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C, RGS = 1M 800 V PLUS247 (IXFX) VGSS Continuous 30

 9.2. Size:118K  ixys
 ixfk40n90p ixfx40n90p.pdf 

Preliminary Technical Information VDSS = 900V IXFK40N90P PolarTM Power MOSFET ID25 = 40A IXFX40N90P HiPerFETTM RDS(on) 210m N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C, RGS = 1M

 9.3. Size:100K  ixys
 ixfx44n55q.pdf 

Advance Technical Information IXFK 44N55Q VDSS = 550 V HiPerFETTM IXFX 44N55Q ID25 = 44 A Power MOSFETs RDS(on) = 120 m Q-CLASS trr 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg PLUS 247TM (IXFX) High dV/dt, Low t rr Symbol Test Conditions Maximum Ratings (TAB) G D VDSS TJ = 25 C to 150 C 550

 9.4. Size:104K  ixys
 ixfx44n60 ixfk44n60.pdf 

HiPerFETTM IXFX 44N60 VDSS = 600 V IXFK 44N60 ID25 = 44 A Power MOSFETs RDS(on) = 130 mW Single MOSFET Die trr 250 ns PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C44 A TO-264 AA (IXFK) IDM TC = 25 C, pulse width limite

 9.5. Size:126K  ixys
 ixfx44n50f ixfk44n50f.pdf 

HiPerRFTM VDSS = 500V IXFK44N50F ID25 = 44A Power MOSFETs IXFX44N50F RDS(on) 120m F-Class MegaHertz Switching trr 250ns Single MOSFET Die TO-264 (IXFK) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C

 9.6. Size:223K  ixys
 ixfk48n60p ixfx48n60p.pdf 

IXFK 48N60P VDSS = 600 V PolarHVTM HiPerFET IXFX 48N60P ID2 = 48 A Power MOSFET RDS(on) 135m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Continuou

 9.7. Size:574K  ixys
 ixfk48n50q ixfx48n50q ixfk44n50q ixfx44n50q.pdf 

VDSS ID25 RDS(on) HiPerFETTM IXFK/IXFX 48N50Q 500 V 48 A 100 m Power MOSFETs IXFK/IXFX 44N50Q 500 V 44 A 120 m Q-CLASS trr 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg PLUS 247TM (IXFX) High dV/dt, Low trr Symbol Test Conditions Maximum Ratings (TAB) G D VDSS TJ = 25 C to 150