IXFX64N50P - параметры транзистора MOSFET, его аналоги, datasheet

IXFX64N50P Datasheet (PDF)

..1. Size:225K ixys
ixfk64n50p ixfx64n50p.pdf pdf_icon

IXFK 64N50P VDSS = 500 VPolarHVTM HiPerFETIXFX 64N50P ID25 = 64 APower MOSFET RDS(on) 85 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo

5.1. Size:346K inchange semiconductor
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isc N-Channel MOSFET Transistor IXFX64N50Q3FEATURESDrain Current : I = 64A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

7.1. Size:169K ixys
ixfk64n60p ixfx64n60p.pdf pdf_icon

IXFK 64N60PVDSS = 600 VPolarHVTM HiPerFETIXFX 64N60PID25 = 64 APower MOSFET RDS(on) 96 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Contin

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