IXTA1N80 datasheet, подбор замены

 ..1. Size:60K  ixys
 ixta1n80 ixtp1n80 ixty1n80.pdf 

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode RDS(on) = 11 Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 T

 0.1. Size:161K  ixys
 ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf 

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET RDS(on) 14 IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25 C to 150 C 800 V VD

 8.1. Size:238K  ixys
 ixta1n170dhv ixth1n170dhv.pdf 

Advance Technical Information Depletion Mode VDSX = 1700V IXTA1N170DHV MOSFET ID(on) > 1A IXTH1N170DHV RDS(on) 16 N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25 C to 150 C 1700 V VDGX TJ = 25 C to 150 C, RGS = 1M 1700 V VGSX Continuous 20 V VGSM Transient 30 V

 8.2. Size:95K  ixys
 ixta1n100p ixtp1n100p.pdf 

Advance Technical Information IXTA 1N100P VDSS = 1000 V PolarHVTM IXTP 1N100P ID25 = 1.2 A Power MOSFET RDS(on) = 13 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V G VGS Continuous 20 V S (TAB) VGSM Transient 30 V ID25 TC = 25 C

 8.3. Size:252K  ixys
 ixta1n200p3hv ixth1n200p3 ixth1n200p3hv.pdf 

Preliminary Technical Information High Voltage VDSS = 2000V IXTA1N200P3HV Power MOSFET ID25 = 1.0A IXTH1N200P3HV RDS(on) 40 IXTH1N200P3 N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247HV (IXTH) VDSS TJ = 25 C to 150 C 2000 V VDGR TJ = 25 C to 150 C, RGS = 1M

 8.4. Size:535K  ixys
 ixta1n100 ixtp1n100.pdf 

VDSS = 1000 V IXTA 1N100 High Voltage MOSFET IXTP 1N100 ID25 = 1.5 A RDS(on) = 11 N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 30 V D (TAB) G VGSM Transient 40 V D S ID25 TC = 25 C 1.5 A IDM TC =

 8.5. Size:202K  inchange semiconductor
 ixta1n100p.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IXTA1N100P FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE