Справочник MOSFET. IXTA1R6N100D2

 

IXTA1R6N100D2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IXTA1R6N100D2

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 100 W

Предельно допустимое напряжение сток-исток (Uds): 1000 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 1.6 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 27 nC

Сопротивление сток-исток открытого транзистора (Rds): 10 Ohm

Тип корпуса: TO263

Аналог (замена) для IXTA1R6N100D2

 

 

IXTA1R6N100D2 Datasheet (PDF)

2.1. ixty1r6n50d2 ixta1r6n50d2 ixtp1r6n50d2.pdf Size:179K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information Depletion Mode VDSX = 500V IXTY1R6N50D2 MOSFET ID(on) > 1.6A IXTA1R6N50D2 ? ? RDS(on) ? 2.3? ? ? ? ? ? ? IXTP1R6N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25C to 150C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25C 100 W D (Tab) TJ - 55 ... +150 C TJM 15

5.1. ixta160n10t7.pdf Size:164K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information VDSS = 100 V IXTA160N10T7 TrenchMVTM ID25 = 160 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C; RGS = 1 M? 100 V VGSM Transient 30 V 1 ID25 TC = 25C 160 A 7 ILRMS Lead Current Li

5.2. ixta1n100p ixtp1n100p.pdf Size:95K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Advance Technical Information IXTA 1N100P VDSS = 1000 V PolarHVTM IXTP 1N100P ID25 = 1.2 A Power MOSFET ? RDS(on) = 13 ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G VGS Continuous 20 V S (TAB) VGSM Transient 30 V ID25 TC = 25C 1.2 A IDM TC =

 5.3. ixta12n65x2 ixth12n65x2 ixtp12n65x2.pdf Size:200K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Advance Technical Information X2-Class VDSS = 650V IXTA12N65X2 Power MOSFET ID25 = 12A IXTP12N65X2   RDS(on)    300m     IXTH12N65X2 N-Channel Enhancement Mode TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30

5.4. ixta160n075t ixtp160n075t.pdf Size:174K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information IXTA160N075T VDSS = 75 V TrenchMVTM IXTP160N075T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 6.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V G VGSM Transient 20 V S D (TAB) ID25 TC = 25C 160 A TO-220 (IXTP) ILRMS

 5.5. ixta160n10t ixtp160n10t.pdf Size:174K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information IXTA160N10T VDSS = 100 V TrenchMVTM IXTP160N10T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25C to 175C 100 V TO-220 (IXTP) VDGR TJ = 25C to 175C; RGS = 1 M? 100 V VGSM Transient 30 V ID25 TC = 25C 160 A IL

5.6. ixta15n50l2.pdf Size:167K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Linear L2TM VDSS = 500V IXTA15N50L2 Power MOSFETs ID25 = 15A IXTP15N50L2 ≤ Ω RDS(on) ≤ 480mΩ ≤ Ω ≤ Ω ≤ Ω w/ Extended FBSOA IXTH15N50L2 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±20 V

5.7. ixta1n170dhv ixth1n170dhv.pdf Size:238K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Advance Technical Information Depletion Mode VDSX = 1700V IXTA1N170DHV MOSFET ID(on) > 1A IXTH1N170DHV   RDS(on)  16       N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1700 V VDGX TJ = 25C to 150C, RGS = 1M 1700 V VGSX Continuous 20 V VGSM Transient 30 V

5.8. ixta1n80 ixtp1n80 ixty1n80.pdf Size:60K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode ? RDS(on) = 11 ? ? ? ? Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 TC = 25C 750 mA TO-2

5.9. ixta182n055t7.pdf Size:203K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information VDSS = 55 V IXTA182N055T7 TrenchMVTM ID25 = 182 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGSM Transient 20 V 1 ID25 TC = 25 C 182 A 7 ILRMS Package Curre

5.10. ixta152n085t7.pdf Size:196K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information VDSS = 85 V IXTA152N085T7 TrenchMVTM ID25 = 152 A Power MOSFET ? ? RDS(on) ? 7.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V VGSM Transient 20 V 1 ID25 TC = 25 C 152 A 7 ILRMS Lead Current

5.11. ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf Size:161K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET ? ? RDS(on) ? ? ? 14? ? ? ? ? IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150

5.12. ixta180n10t ixtp180n10t.pdf Size:154K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

IXTA180N10T VDSS = 100V TrenchMVTM IXTP180N10T ID25 = 180A Power MOSFET ? ? ? ? RDS(on) ? 6.4m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25C to 175C 100 V TO-220 (IXTP) VDGR TJ = 25C to 175C, RGS = 1M? 100 V VGSM Transient 30 V ID25 TC = 25C 180 A ILRMS Lead Current limit, RMS 75 A G

5.13. ixta152n085t ixtp152n085t.pdf Size:214K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information VDSS = 85 V IXTA152N085T TrenchMVTM ID25 = 152 A IXTP152N085T Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 152 A ILRMS Lead C

5.14. ixta110n055t ixtp110n055t.pdf Size:216K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information IXTA110N055T VDSS = 55 V TrenchMVTM IXTP110N055T ID25 = 110 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 110 A ILRMS Lead Cur

5.15. ixta160n075t7.pdf Size:197K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information VDSS = 75 V IXTA160N075T7 TrenchMVTM ID25 = 160 A Power MOSFET ? ? RDS(on) ? 6.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 75 V VGSM Transient 20 V 1 ID25 TC = 25 C 160 A TAB 7 ILRMS Lead Cu

5.16. ixta180n10t7.pdf Size:197K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

PreliminaryTechnical Information VDSS = 100 V IXTA180N10T7 TrenchMVTM ID25 = 180 A Power MOSFET ? ? RDS(on) ? 6.4 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGSM Transient 30 V 1 ID25 TC = 25 C 180 A 7 ILRMS Package Curr

5.17. ixta180n085t7.pdf Size:197K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information VDSS = 85 V IXTA180N085T7 TrenchMVTM ID25 = 180 A Power MOSFET ? ? RDS(on) ? 5.5 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V VGSM Transient 20 V 1 ID25 TC = 25 C 180 A 7 ILRMS Package Curre

5.18. ixta110n055t7.pdf Size:198K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information VDSS = 55 V TrenchMVTM IXTA110N055T7 ID25 = 110 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGSM Transient 20 V 1 ID25 TC = 25 C 110 A 7 IDM TC = 25 C, puls

5.19. ixta16n50p ixtp16n50p ixtq16n50p.pdf Size:143K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

IXTA 16N50P VDSS = 500 V PolarHVTM IXTP 16N50P ID25 = 16 A Power MOSFET IXTQ 16N50P RDS(on) ? ? ? ? ? 400 m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25C16 A IDM TC = 25C, pulse wid

5.20. ixta14n60p ixtq14n60p ixtp14n60p.pdf Size:147K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

IXTA 14N60P VDSS = 600 V PolarHVTM IXTP 14N60P ID25 = 14 A Power MOSFET ? ? IXTQ 14N60P RDS(on) ? 550 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V G VGS Continuous 30 V S (TAB) VGSM Tranisent 40 V ID25 TC = 25C14 A TO-220 (IXTP) IDM TC =

5.21. ixta130n10t-trl.pdf Size:147K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

IXTA130N10T VDSS = 100V TrenchMVTM IXTP130N10T ID25 = 130A Power MOSFET ≤ Ω RDS(on) ≤ 9.1mΩ ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings S (TAB) VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100 V TO-220 (IXTP) VGSM Transient ± 30 V ID25 TC = 25°C 130 A ILRMS Lead Curre

5.22. ixta160n04t2 ixtp160n04t2.pdf Size:204K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information IXTA160N04T2 VDSS = 40V TrenchT2TM IXTP160N04T2 ID25 = 160A Power MOSFET ? ? RDS(on) ? ? ? 5m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 175C40 V S VDGR TJ = 25C to 175C, RGS = 1M? 40 V (TAB) VGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25C 160 A ILRMS Lead

5.23. ixta180n055t ixtp180n055t ixtq180n055t.pdf Size:108K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Advance Technical Information IXTQ 180N055T VDSS = 55 V Trench Gate IXTA 180N055T ID25 = 180 A Power MOSFET IXTP 180N055T RDS(on) = 4.0 mΩ Ω Ω Ω Ω N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C55 V G VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 55 V D (TAB) S VGSM ±20 V TO-220 (IXTP) ID25 TC = 25°C 180 A IDRM

5.24. ixta1n100 ixtp1n100.pdf Size:535K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

VDSS = 1000 V IXTA 1N100 High Voltage MOSFET IXTP 1N100 ID25 = 1.5 A ? RDS(on) = 11 ? ? ? ? N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 30 V D (TAB) G VGSM Transient 40 V D S ID25 TC = 25C 1.5 A IDM TC = 25C, pulse width lim

5.25. ixta182n055t ixtp182n055t.pdf Size:221K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information IXTA182N055T VDSS = 55 V TrenchMVTM IXTP182N055T ID25 = 182 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 182 A ILRMS Lead Cu

5.26. ixta1n200p3hv ixth1n200p3 ixth1n200p3hv.pdf Size:252K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information High Voltage VDSS = 2000V IXTA1N200P3HV Power MOSFET ID25 = 1.0A IXTH1N200P3HV   RDS(on)    40     IXTH1N200P3 N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247HV (IXTH) VDSS TJ = 25C to 150C 2000 V VDGR TJ = 25C to 150C, RGS = 1M

5.27. ixta110n055p ixtp110n055p ixtq110n055p.pdf Size:254K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

IXTA 110N055P VDSS = 55 V PolarHTTM IXTP 110N055P ID25 = 110 A Power MOSFET IXTQ 110N055P RDS(on) ? 13.5 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C55 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGS Continuous 20 V TO-220 (IXTP) VGSM Tranisent 30 V ID25 TC = 25 C 110

5.28. ixta180n085t ixtp180n085t.pdf Size:214K _ixys

IXTA1R6N100D2
IXTA1R6N100D2

Preliminary Technical Information IXTA180N085T VDSS = 85 V TrenchMVTM IXTP180N085T ID25 = 180 A Power MOSFET ? ? RDS(on) ? 5.5 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 180 A ILRMS Lead Cu

5.29. ixta12n70x2.pdf Size:257K _inchange_semiconductor

IXTA1R6N100D2
IXTA1R6N100D2

Isc N-Channel MOSFET Transistor IXTA12N70X2 ·FEATURES ·With TO-263(D2PAK) packaging ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

5.30. ixta152n085t.pdf Size:258K _inchange_semiconductor

IXTA1R6N100D2
IXTA1R6N100D2

Isc N-Channel MOSFET Transistor IXTA152N085T ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

5.31. ixta1n100p.pdf Size:202K _inchange_semiconductor

IXTA1R6N100D2
IXTA1R6N100D2

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IXTA1N100P ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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