IXTA200N085T7 - параметры транзистора MOSFET, его аналоги, datasheet

IXTA200N085T7 Datasheet (PDF)

..1. Size:163K ixys
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Preliminary Technical InformationVDSS = 85 VIXTA200N085T7TrenchMVTMID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 V1ID25 TC = 25C 200 A 7

2.1. Size:215K ixys
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Preliminary Technical InformationIXTA 200N085T VDSS = 85 VTrenchMVTMIXTP 200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25

5.1. Size:198K ixys
ixta200n075t7.pdf pdf_icon

Preliminary Technical InformationVDSS = 75 VIXTA200N075T7TrenchMVTMID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VVGSM Transient 20 V1ID25 TC = 25

5.2. Size:215K ixys
ixta200n075t ixtp200n075t.pdf pdf_icon

Preliminary Technical InformationIXTA200N075TVDSS = 75 VTrenchMVTMIXTP200N075TID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .