IXTA230N075T2-7 datasheet, аналоги, основные параметры
Наименование производителя: IXTA230N075T2-7
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 480 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 230 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 66 ns
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
Тип корпуса: TO263
Аналог (замена) для IXTA230N075T2-7
- подборⓘ MOSFET транзистора по параметрам
IXTA230N075T2-7 даташит
1.1. Size:310K ixys
ixta230n075t2 ixtp230n075t2.pdf 
TrenchT2TM VDSS = 75V IXTA230N075T2 ID25 = 230A Power MOSFET IXTP230N075T2 RDS(on) 4.2m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C, RGS = 1M 75 V VGSM Transient 20 V G D S ID25 TC = 25 C 2
9.1. Size:198K ixys
ixta200n075t7.pdf 
Preliminary Technical Information VDSS = 75 V IXTA200N075T7 TrenchMVTM ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V 1 ID25 TC = 25
9.2. Size:214K ixys
ixta220n055t ixtp220n055t.pdf 
Preliminary Technical Information IXTA220N055T VDSS = 55 V TrenchMVTM IXTP220N055T ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 T
9.3. Size:175K ixys
ixta220n075t ixtp220n075t.pdf 
Preliminary Technical Information IXTA220N075T VDSS = 75 V TrenchMVTM IXTP220N075T ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 2
9.4. Size:231K ixys
ixta20n65x ixth20n65x ixtp20n65x.pdf 
Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X RDS(on) 210m IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VG
9.5. Size:248K ixys
ixta260n055t2 ixtp260n055t2.pdf 
TrenchT2TM IXTA260N055T2 VDSS = 55V IXTP260N055T2 ID25 = 260A Power MOSFET RDS(on) 3.3m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 55 V S (TAB) VDGR TJ = 25 C to 175 C, RGS = 1M 55 V VGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25 C 260 A ILRM
9.6. Size:113K ixys
ixta2n80 ixtp2n80.pdf 
VDSS = 800 V High Voltage MOSFET IXTA 2N80 ID25 = 2 A IXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A
9.7. Size:215K ixys
ixta200n085t ixtp200n085t.pdf 
Preliminary Technical Information IXTA 200N085T VDSS = 85 V TrenchMVTM IXTP 200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25
9.8. Size:173K ixys
ixta240n055t ixtp240n055t.pdf 
Preliminary Technical Information IXTA240N055T VDSS = 55 V TrenchMVTM IXTP240N055T ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 2
9.9. Size:76K ixys
ixta2n100 ixtp2n100.pdf 
High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 RDS(on) = 7 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A IDM TC = 25 C, pulse width limited by
9.10. Size:163K ixys
ixta200n085t7.pdf 
Preliminary Technical Information VDSS = 85 V IXTA200N085T7 TrenchMVTM ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V 1 ID25 TC = 25 C 200 A 7
9.11. Size:163K ixys
ixta270n04t4 ixth270n04t4 ixtp270n04t4.pdf 
Advance Technical Information VDSS = 40V TrenchT4TM IXTA270N04T4 ID25 = 270A Power MOSFET IXTP270N04T4 RDS(on) 2.4m IXTH270N04T4 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C40 V G D D (Tab) S VDGR TJ = 25 C to 175 C, RG
9.13. Size:163K ixys
ixta220n075t7.pdf 
Preliminary Technical Information VDSS = 75 V IXTA220N075T7 TrenchMVTM ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V 1 ID25 TC = 25 C 220 A 7
9.14. Size:197K ixys
ixta220n055t7.pdf 
Preliminary Technical Information VDSS = 55 V IXTA220N055T7 TrenchMVTM ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V 1 ID25 TC = 25
9.15. Size:162K ixys
ixta240n055t7.pdf 
Preliminary Technical Information VDSS = 55 V IXTA240N055T7 TrenchMVTM ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V 1 ID25 TC = 25 C 240 A 7
9.16. Size:215K ixys
ixta200n075t ixtp200n075t.pdf 
Preliminary Technical Information IXTA200N075T VDSS = 75 V TrenchMVTM IXTP200N075T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25
Другие IGBT... IXTA200N085T7, IXTA220N04T2, IXTA220N04T2-7, IXTA220N055T, IXTA220N055T7, IXTA220N075T, IXTA220N075T7, IXTA230N075T2, 60N06, IXTA240N055T, IXTA240N055T7, IXTA24P085T, IXTA260N055T2, IXTA260N055T2-7, IXTA26P10T, IXTA26P20P, IXTA28P065T
