IXTA42N25P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTA42N25P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 300 W
Предельно допустимое напряжение сток-исток |Uds|: 250 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5.5 V
Максимально допустимый постоянный ток стока |Id|: 42 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 70 nC
Время нарастания (tr): 200 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.084 Ohm
Тип корпуса: TO263
Аналог (замена) для IXTA42N25P
IXTA42N25P Datasheet (PDF)
ixta42n25p ixtp42n25p ixtq42n25p.pdf
IXTA 42N25P VDSS = 250 VPolarHTTMIXTP 42N25P ID25 = 42 APower MOSFET IXTQ 42N25P RDS(on) 84 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C 250 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB)VGS Continuous 20 VTO-220 (IXTP)VGSM Transient 3
ixta4n150hv.pdf
Preliminary Technical InformationHigh Voltage VDSS = 1500VIXTA4N150HVID25 = 4APower MOSFETsIXTT4N150HV RDS(on) 6 N-Channel Enhancement ModeFast Intrinsic DiodeTO-263Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 1500 VSVDGR TJ = 25C to 150C, RGS = 1M 1500 VD (Tab)VGSS Continuous 30 VVGSM Transient
ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf
Preliminary Technical InformationX2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG
ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf
PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V
ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf
X2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VGVGSM Transient 40 VSID25 TC
ixta460p2 ixtp460p2 ixtq460p2 ixth460p2.pdf
PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V
ixty48p05t ixta48p05t ixtp48p05t.pdf
TrenchPTM VDSS = - 50VIXTY48P05TID25 = - 48APower MOSFETIXTA48P05T RDS(on) 30m IXTP48P05TP-Channel Enhancement ModeAvalanche RatedTO-252 (IXTY)G SD (Tab)TO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C - 50 VSVDGR TJ = 25C to 150C, RGS = 1M - 50 VD (Tab)VGSS Continuous 15
ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf
IXTA4N60P VDSS = 600 VPolarHVTMIXTP4N60P ID25 = 4 APower MOSFETIXTU4N60P RDS(on) 2.0 N-Channel Enhancement ModeIXTY4N60PAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient 40 V
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