Справочник MOSFET. IXTH22N50P

 

IXTH22N50P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IXTH22N50P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 350 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 400 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для IXTH22N50P

   - подбор ⓘ MOSFET транзистора по параметрам

 

IXTH22N50P Datasheet (PDF)

 ..1. Size:198K  ixys
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IXTH22N50P

IXTH 22N50P VDSS = 500 VPolarHVTMIXTQ 22N50P ID25 = 22 APower MOSFETIXTV 22N50P RDS(on) 270 m N-Channel Enhancement ModeIXTV 22N50PSAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25C to 150C 500 VSVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 30 VTO-3P (IXTQ)VGSM Trans

 8.1. Size:185K  ixys
ixth220n075t ixtq220n075t.pdfpdf_icon

IXTH22N50P

Preliminary Technical InformationIXTH220N075T VDSS = 75 VTrenchMVTMIXTQ220N075T ID25 = 220 APower MOSFET RDS(on) 4.5 m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C75 VG(TAB)DVDGR TJ = 25C to 175C; RGS = 1 M 75 VSVGSM Transient 20 VID25 TC = 25

 8.2. Size:204K  ixys
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IXTH22N50P

Preliminary Technical InformationIXTH220N055T VDSS = 55 VTrenchMVTMIXTQ220N055T ID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C55 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VTO-

 9.1. Size:202K  ixys
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IXTH22N50P

Advance Technical InformationHigh Voltage VDSS = 3000VIXTT2N300P3HVPower MOSFETID25 = 2AIXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VV

Другие MOSFET... IXTH1N250 , IXTH200N075T , IXTH200N085T , IXTH200N10T , IXTH20N50D , IXTH20P50P , IXTH220N055T , IXTH220N075T , 8205A , IXTH230N085T , IXTH240N055T , IXTH24N50L , IXTH24N50Q , IXTH24P20 , IXTH250N075T , IXTH260N055T2 , IXTH26N60P .

 

 
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