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IXTH22N50P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTH22N50P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 350 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 50 nC
   trⓘ - Время нарастания: 400 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
   Тип корпуса: TO247

 Аналог (замена) для IXTH22N50P

 

 

IXTH22N50P Datasheet (PDF)

 ..1. Size:198K  ixys
ixth22n50p ixtq22n50p ixtv22n50p.pdf

IXTH22N50P
IXTH22N50P

IXTH 22N50P VDSS = 500 VPolarHVTMIXTQ 22N50P ID25 = 22 APower MOSFETIXTV 22N50P RDS(on) 270 m N-Channel Enhancement ModeIXTV 22N50PSAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25C to 150C 500 VSVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 30 VTO-3P (IXTQ)VGSM Trans

 8.1. Size:185K  ixys
ixth220n075t ixtq220n075t.pdf

IXTH22N50P
IXTH22N50P

Preliminary Technical InformationIXTH220N075T VDSS = 75 VTrenchMVTMIXTQ220N075T ID25 = 220 APower MOSFET RDS(on) 4.5 m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C75 VG(TAB)DVDGR TJ = 25C to 175C; RGS = 1 M 75 VSVGSM Transient 20 VID25 TC = 25

 8.2. Size:204K  ixys
ixth220n055t ixtq220n055t.pdf

IXTH22N50P
IXTH22N50P

Preliminary Technical InformationIXTH220N055T VDSS = 55 VTrenchMVTMIXTQ220N055T ID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C55 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VTO-

 9.1. Size:202K  ixys
ixth2n300p3hv ixtt2n300p3hv.pdf

IXTH22N50P
IXTH22N50P

Advance Technical InformationHigh Voltage VDSS = 3000VIXTT2N300P3HVPower MOSFETID25 = 2AIXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VV

 9.2. Size:316K  ixys
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf

IXTH22N50P
IXTH22N50P

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

 9.3. Size:105K  ixys
ixth20n60 ixtm20n60.pdf

IXTH22N50P
IXTH22N50P

IXTH 20N60 VDSS = 600 VMegaMOSTMFETIXTM 20N60 ID25 = 20 ARDS(on) = 0.35 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 15N60 15 ATO-204 AE (IXTM)20N60 20 AIDM TC = 25C, p

 9.4. Size:205K  ixys
ixth230n085t ixtq230n085t.pdf

IXTH22N50P
IXTH22N50P

Preliminary Technical InformationIXTH230N085T VDSS = 85 VTrenchMVTMIXTQ230N085T ID25 = 230 APower MOSFET RDS(on) 4.4 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25C to 175C 85 VSVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 VTO-3P (

 9.5. Size:230K  ixys
ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf

IXTH22N50P
IXTH22N50P

IXTH26N60P VDSS = 600 VPolarHVTMIXTQ26N60P ID25 = 26 APower MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement ModeIXTV26N60PAvalanche RatedTO-247 (IXTH)IXTV26N60PSGDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-3P (IXTQ)VDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Tran

 9.6. Size:204K  ixys
ixth240n055t ixtq240n055t.pdf

IXTH22N50P
IXTH22N50P

Preliminary Technical InformationIXTH240N055T VDSS = 55 VTrenchMVTMIXTQ240N055T ID25 = 240 APower MOSFET RDS(on) 3.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VID25 TC = 25 C 240

 9.7. Size:337K  ixys
ixtt240n15x4hv ixth240n15x4.pdf

IXTH22N50P
IXTH22N50P

Advance Technical InformationX4-Class VDSS = 150VIXTT240N15X4HVPower MOSFETTM ID25 = 240AIXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXTT..HV)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 175C 150 V D (Tab)VDGR TJ = 25C to 175C, RGS = 1M 150 VTO-247 (IXTH)VGSS Cont

 9.8. Size:231K  ixys
ixta20n65x ixth20n65x ixtp20n65x.pdf

IXTH22N50P
IXTH22N50P

Preliminary Technical InformationX-Class VDSS = 650VIXTA20N65XPower MOSFET ID25 = 20AIXTP20N65X RDS(on) 210m IXTH20N65XN-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVG

 9.9. Size:204K  ixys
ixth250n075t ixtq250n075t.pdf

IXTH22N50P
IXTH22N50P

Preliminary Technical InformationIXTH250N075T VDSS = 75 VTrenchMVTMIXTQ250N075T ID25 = 250 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode TO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DSVDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VTO-3P (IXTQ)VGSM Transient

 9.10. Size:166K  ixys
ixth260n055t2.pdf

IXTH22N50P
IXTH22N50P

Preliminary Technical InformationVDSS = 55VTrenchT2TM PowerIXTH260N055T2ID25 = 260AMOSFET RDS(on) 3.3m N-Channel Enhancement ModeAvalanche RatedTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VGVDGR TJ = 25C to 175C, RGS = 1M 55 V (TAB)DSVGSM Transient 20 VID25 TC = 25C 260 AG = Gate D =

 9.11. Size:163K  ixys
ixta270n04t4 ixth270n04t4 ixtp270n04t4.pdf

IXTH22N50P
IXTH22N50P

Advance Technical InformationVDSS = 40VTrenchT4TMIXTA270N04T4ID25 = 270APower MOSFET IXTP270N04T4 RDS(on) 2.4m IXTH270N04T4N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C40 VGDD (Tab)SVDGR TJ = 25C to 175C, RG

 9.12. Size:184K  ixys
ixta26p20p ixth26p20p ixtp26p20p ixtq26p20p.pdf

IXTH22N50P
IXTH22N50P

Preliminary Technical InformationIXTA26P20P VDSS = - 200VPolarPTMIXTH26P20P ID25 = - 26APower MOSFET IXTP26P20P RDS(on) 170m P-Channel Enhancement ModeAvalanche RatedIXTQ26P20PTO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP)GSGD(TAB)D(TAB)GD(TAB)DS DSSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 175

 9.13. Size:108K  ixys
ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf

IXTH22N50P
IXTH22N50P

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 21N50 21 A

 9.14. Size:205K  ixys
ixth200n085t ixtq200n085t.pdf

IXTH22N50P
IXTH22N50P

Preliminary Technical InformationIXTH200N085T VDSS = 85 VTrenchMVTMIXTQ200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 VID25 TC = 25 C 20

 9.15. Size:172K  ixys
ixth2n170d2 ixtt2n170d2.pdf

IXTH22N50P
IXTH22N50P

Depletion Mode VDSX = 1700VIXTT2N170D2MOSFETs ID(on) > 2AIXTH2N170D2 RDS(on) 6.5 N-ChannelTO-268 (IXTT)GSD (Tab)TO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1700 VVDGX TJ = 25C to 150C, RGS = 1M 1700 VVGSX Continuous 20 VGVGSM Transient 30 VDD (Tab)SPD TC = 25C 568 WG = Gate

 9.16. Size:184K  ixys
ixth200n075t ixtq200n075t.pdf

IXTH22N50P
IXTH22N50P

Preliminary Technical InformationIXTH200N075T VDSS = 75 VTrench GateIXTQ200N075T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 VID25 TC = 25C 200 AILRMS

 9.17. Size:109K  ixys
ixth2n150l.pdf

IXTH22N50P
IXTH22N50P

Advance Technical InformationLinearTM Power MOSFET VDSS = 1500VIXTH2N150LID25 = 2Aw/Extended FBSOA RDS(on) 15 N-Channel Enhancement ModeGuaranteed FBSOAAvalanche RatedTO-247GD (Tab)SSymbol Test Conditions Maximum RatingsG = Gate D = DrainVDSS TJ = 25C to 150C 1500 V S = Source Tab = DrainVDGR TJ = 25C to 150C

 9.18. Size:140K  ixys
ixth2n150.pdf

IXTH22N50P
IXTH22N50P

Advance Technical InformationHigh Voltage VDSS = 1500VIXTH2N150ID25 = 2APower MOSFET RDS(on) 9.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 30 VSVGSM Transient 40 VG

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