IXTH50P085 datasheet, аналоги, основные параметры

Наименование производителя: IXTH50P085

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 180 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm

Тип корпуса: TO247

Аналог (замена) для IXTH50P085

- подборⓘ MOSFET транзистора по параметрам

 

IXTH50P085 даташит

 8.1. Size:187K  ixys
 ixth500n04t2 ixtt500n04t2.pdf pdf_icon

IXTH50P085

Advance Technical Information TrenchT2TM VDSS = 40V IXTH500N04T2 ID25 = 500A Power MOSFET IXTT500N04T2 RDS(on) 1.6m N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C40 V VDGR TJ = 25 C to 175 C, RGS = 1M 40 V TO-268 (IXTT) VGSM T

 8.2. Size:230K  ixys
 ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf pdf_icon

IXTH50P085

IXTA50N25T IXTQ50N25T Trench Gate VDSS = 250V IXTP50N25T IXTH50N25T ID25 = 50A Power MOSFET RDS(on) 60m N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) D D (Tab) D (Tab) S TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C, RGS = 1M

 8.3. Size:111K  ixys
 ixth50n20 ixtm50n20.pdf pdf_icon

IXTH50P085

IXTH 50N20 VDSS = 200 V MegaMOSTMFET IXTM 50N20 ID25 = 50 A RDS(on) = 45 m N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C50 A TO-204 AE (IXTM) IDM TC = 25 C, pulse width limited b

 8.4. Size:378K  ixys
 ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf pdf_icon

IXTH50P085

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ПОКАЗАТЬ ЕЩЁ

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