IXTK110N20L2 datasheet, подбор замены

 ..1. Size:158K  ixys
 ixtk110n20l2 ixtx110n20l2.pdf 

Advance Technical Information LinearL2TM Power VDSS = 200V IXTK110N20L2 MOSFET w/Extended ID25 = 110A IXTX110N20L2 FBSOA RDS(on)

 ..2. Size:207K  inchange semiconductor
 ixtk110n20l2.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IXTK110N20L2 FEATURES With TO-3PL package Low input capacitance and gate charge High speed switching Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUT

 9.1. Size:252K  ixys
 ixtk150n15p ixtq150n15p.pdf 

IXTK 150N15P PolarHTTM VDSS = 150 V IXTQ 150N15P Power MOSFET ID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V G D (TAB) VGS Continuous 20 V D S VGSM Transient 30 V ID25 TC = 25

 9.2. Size:166K  ixys
 ixtt170n10p ixtq170n10p ixtk170n10p.pdf 

PolarTM VDSS = 100V IXTT170N10P ID25 = 170A Power MOSFET IXTQ170N10P RDS(on) 9m IXTK170N10P TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C, RGS = 1M 100 V G D VGSS Continuous 20 V S Tab VGSM Transient

 9.3. Size:178K  ixys
 ixtk120p20t ixtx120p20t.pdf 

Advance Technical Information TrenchPTM VDSS = - 200V IXTK120P20T Power MOSFETs ID25 = - 120A IXTX120P20T RDS(on) 30m trr 300ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C - 200 V D S VDGR TJ = 25 C to 150 C, RGS

 9.4. Size:177K  ixys
 ixtk170p10p ixtx170p10p.pdf 

PolarPTM VDSS = -100V IXTK170P10P ID25 = -170A Power MOSFET IXTX170P10P RDS(on) 12m P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C, RGS = 1M -100 V G D (TAB) S VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C -1

 9.5. Size:88K  ixys
 ixtk17n120l ixtx17n120l.pdf 

 9.6. Size:191K  ixys
 ixtk120n20p ixtq120n20p.pdf 

IXTK 120N20P PolarHTTM VDSS = 200 V IXTQ 120N20P Power MOSFET ID25 = 120 A RDS(on) 22 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V G VGS Continuous 20 V D (TAB) S VGSM Transient 30 V ID25 TC = 25

 9.7. Size:159K  ixys
 ixtk120n65x2 ixtx120n65x2.pdf 

Advance Technical Information X2-Class VDSS = 650V IXTK120N65X2 Power MOSFET ID25 = 120A IXTX120N65X2 RDS(on) 24m N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Continuous 30 V PLUS247 (IX

 9.8. Size:274K  ixys
 ixtk100n25p ixtt100n25p ixtq100n25p.pdf 

IXTK 100N25P VDSS = 250 V PolarHTTM IXTQ 100N25P ID25 = 100 A Power MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V G D (TAB) DS VGSM Transient 30 V ID

 9.9. Size:163K  ixys
 ixtk120n25p.pdf 

VDSS = 250 V IXTK 120N25P PolarHTTM ID25 = 120 A Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 250 V VDGR TJ = 25 C to 175 C; RGS = 1 M 250 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 120 A G D (TAB) ID(RMS

 9.10. Size:193K  ixys
 ixtk102n65x2 ixtx102n65x2.pdf 

Preliminary Technical Information X2-Class VDSS = 650V IXTK102N65X2 Power MOSFET ID25 = 102A IXTX102N65X2 RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Contin

 9.11. Size:163K  ixys
 ixtk180n15p.pdf 

VDSS = 150 V IXTK 180N15P PolarHTTM ID25 = 180 A Power MOSFET RDS(on) 10 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VDSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 180 A D (TAB) S ID(

 9.12. Size:162K  ixys
 ixtk140n20p.pdf 

VDSS = 200 V IXTK 140N20P PolarHTTM ID25 = 140 A Power MOSFET RDS(on) 18 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V VGS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 140 A D (TAB) S ID(R

 9.13. Size:225K  ixys
 ixtk102n30p.pdf 

VDSS = 300 V IXTK 102N30P PolarHTTM ID25 = 102 A Power MOSFET RDS(on) 33 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 102 A D (TAB) S ID(

 9.14. Size:261K  inchange semiconductor
 ixtk102n30p.pdf 

Isc N-Channel MOSFET Transistor IXTK102N30P FEATURES With To-3PL package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage