IXTK17N120L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTK17N120L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 700 W
Предельно допустимое напряжение сток-исток |Uds|: 1200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 17 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 270 nC
Время нарастания (tr): 1830 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.9 Ohm
Тип корпуса: TO264
Аналог (замена) для IXTK17N120L
IXTK17N120L Datasheet (PDF)
ixtk17n120l ixtx17n120l.pdf
Advance Technical InformationIXTK17N120L VDSS = 1200 VLinear Power MOSFETIXTX17N120L ID25 = 17 AWith Extended FBSOA RDS(on) 0.99 N-Channel Enhancement ModeTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VGDVGS Continuous 30 VS(TAB)VGSM Transient
ixtt170n10p ixtq170n10p ixtk170n10p.pdf
PolarTM VDSS = 100VIXTT170N10PID25 = 170APower MOSFETIXTQ170N10P RDS(on) 9m IXTK170N10PTO-268 (IXTT)N-Channel Enhancement ModeAvalanche RatedGSTabTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C, RGS = 1M 100 VGDVGSS Continuous 20 VSTabVGSM Transient
ixtk170p10p ixtx170p10p.pdf
PolarPTM VDSS = -100V IXTK170P10PID25 = -170APower MOSFET IXTX170P10P RDS(on) 12m P-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -100 VVDGR TJ = 25C to 150C, RGS = 1M -100 V GD (TAB)SVGSS Continuous 20 VVGSM Transient 30 VID25 TC = 25C -1
ixtk150n15p ixtq150n15p.pdf
IXTK 150N15PPolarHTTMVDSS = 150 VIXTQ 150N15PPower MOSFETID25 = 150 A RDS(on) 13 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VGD (TAB)VGS Continuous 20 VDSVGSM Transient 30 VID25 TC = 25
ixtk120p20t ixtx120p20t.pdf
Advance Technical InformationTrenchPTM VDSS = - 200VIXTK120P20TPower MOSFETs ID25 = - 120AIXTX120P20T RDS(on) 30m trr 300nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-264 (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C - 200 V DSVDGR TJ = 25C to 150C, RGS
ixtk120n20p ixtq120n20p.pdf
IXTK 120N20PPolarHTTMVDSS = 200 VIXTQ 120N20PPower MOSFETID25 = 120 A RDS(on) 22 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 200 VVDGR TJ = 25 C to 175 C; RGS = 1 M 200 VGVGS Continuous 20 VD(TAB)SVGSM Transient 30 VID25 TC = 25
ixtk120n65x2 ixtx120n65x2.pdf
Advance Technical InformationX2-Class VDSS = 650VIXTK120N65X2Power MOSFET ID25 = 120AIXTX120N65X2 RDS(on) 24m N-Channel Enhancement ModeAvalanche RatedTO-264P (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS Continuous 30 VPLUS247 (IX
ixtk110n20l2 ixtx110n20l2.pdf
Advance Technical InformationLinearL2TM Power VDSS = 200VIXTK110N20L2MOSFET w/ExtendedID25 = 110AIXTX110N20L2FBSOARDS(on)
ixtk100n25p ixtt100n25p ixtq100n25p.pdf
IXTK 100N25P VDSS = 250 VPolarHTTMIXTQ 100N25P ID25 = 100 APower MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VGD (TAB)DSVGSM Transient 30 VID
ixtk120n25p.pdf
VDSS = 250 VIXTK 120N25PPolarHTTMID25 = 120 APower MOSFET RDS(on) 24 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 175 C 250 VVDGR TJ = 25 C to 175 C; RGS = 1 M 250 VVGS Continuous 20 VVGSM Transient 30 VID25 TC = 25 C 120 AGD(TAB)ID(RMS
ixtk102n65x2 ixtx102n65x2.pdf
Preliminary Technical InformationX2-Class VDSS = 650VIXTK102N65X2Power MOSFET ID25 = 102AIXTX102N65X2 RDS(on) 30m N-Channel Enhancement ModeAvalanche RatedTO-264P (IXTK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS Contin
ixtk180n15p.pdf
VDSS = 150 VIXTK 180N15PPolarHTTMID25 = 180 APower MOSFET RDS(on) 10 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVDSS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C 180 A D(TAB)SID(
ixtk140n20p.pdf
VDSS = 200 VIXTK 140N20PPolarHTTMID25 = 140 APower MOSFET RDS(on) 18 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 175 C 200 VVDGR TJ = 25 C to 175 C; RGS = 1 M 200 VVGS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C 140 A D(TAB)SID(R
ixtk102n30p.pdf
VDSS = 300 VIXTK 102N30PPolarHTTMID25 = 102 APower MOSFET RDS(on) 33 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGSS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C 102 A D(TAB)SID(
ixtk110n20l2.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IXTK110N20L2FEATURESWith TO-3PL packageLow input capacitance and gate chargeHigh speed switchingLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUT
ixtk102n30p.pdf
Isc N-Channel MOSFET Transistor IXTK102N30PFEATURESWith To-3PL packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
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