IXTK20N140 datasheet, подбор замены

 6.1. Size:129K  ixys
 ixtk20n150 ixtx20n150.pdf 

High Voltage Power VDSS = 1500V IXTK20N150 MOSFETs w/ Extended ID25 = 20A IXTX20N150 FBSOA RDS(on)

 8.1. Size:162K  ixys
 ixtk200n10p.pdf 

VDSS = 100 V IXTK 200N10P PolarHTTM ID25 = 200 A Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 200 A D (TAB) S ID

 9.1. Size:560K  ixys
 ixtk250n10.pdf 

IXTK 250N10 VDSS = 100 V High Current ID25 = 250 A MegaMOSTMFET RDS(on) = 5 m N-Channel Enhancement Mode Symbol Test conditions Maximum ratings TO-264 AA (IXTK) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 100 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) G ID25 TC = 25 C MOSFET chip capability 250 A D ID(RMS) Externa

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 ixtk210p10t ixtx210p10t.pdf 

Advance Technical Information TrenchPTM VDSS = - 100V IXTK210P10T Power MOSFETs ID25 = - 210A IXTX210P10T RDS(on) 7.5m trr 200ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C -100 V D S VDGR TJ = 25 C to 150 C, RGS

 9.3. Size:137K  ixys
 ixtk21n100 ixtn21n100.pdf 

IXTK 21N100 VDSS = 1000 V High Voltage IXTN 21N100 ID25 = 21 A MegaMOSTMFETs RDS(on) = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS TJ = 25 C to 150 C 1000 1000 V G D (TAB) D VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 1000 V S VGS Continuous 20 20 V miniBLOC, SOT-227 B VGSM Transient 30