IXTP10P15T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTP10P15T
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 36 nC
trⓘ - Время нарастания: 120 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: TO220
Аналог (замена) для IXTP10P15T
IXTP10P15T Datasheet (PDF)
ixtp10n60pm.pdf
Preliminary Technical InformationIXTP 10N60PM VDSS = 600 VPolarHVTMID25 = 5 APower MOSFET RDS(on) 740 m (Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedOVERMOLDED TO-220Symbol Test Conditions Maximum Ratings(IXTP...M) OUTLINEVDSS TJ = 25C to 175C 600 VVDGR TJ = 25C to 175C; RGS = 1 M 600 VVGS Continuou
ixta152n085t ixtp152n085t.pdf
Preliminary Technical InformationVDSS = 85 VIXTA152N085TTrenchMVTMID25 = 152 AIXTP152N085TPower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25
ixta12n65x2 ixth12n65x2 ixtp12n65x2.pdf
Advance Technical InformationX2-Class VDSS = 650VIXTA12N65X2Power MOSFET ID25 = 12AIXTP12N65X2 RDS(on) 300m IXTH12N65X2N-Channel Enhancement ModeTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30
ixtp1r6n50p ixty1r6n50p.pdf
IXTP 1R6N50P VDSS = 500 VPolarHVTMIXTY 1R6N50P ID25 = 1.6 APower MOSFET RDS(on) 6.5 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 30 VG(TAB)DVGSM Transient 40 VSID25 TC = 25C 1.6 AIDM
ixta1n100p ixtp1n100p.pdf
Advance Technical InformationIXTA 1N100P VDSS = 1000 VPolarHVTMIXTP 1N100P ID25 = 1.2 APower MOSFETRDS(on) = 13 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VGVGS Continuous 20 VS(TAB)VGSM Transient 30 VID25 TC = 25C
ixta1n80 ixtp1n80 ixty1n80.pdf
IXTA 1N80VDSS = 800 VHigh Voltage MOSFETIXTP 1N80ID25 = 750 mAIXTY 1N80N-Channel Enhancement ModeRDS(on) = 11 Avalanche Energy RatedPreliminary DataSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VGDSVGSM Transient 30 VID25 T
ixtp160n085t.pdf
Advance Technical InformationIXTQ 160N085T VDSS = 85 VTrench GateIXTA 160N085T ID25 = 160 APower MOSFETIXTP 160N085T RDS(on) = 6.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C85 VGVDGR TJ = 25C to 175C; RGS = 1 M 85 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 160 AIDRM
ixta110n055t ixtp110n055t.pdf
Preliminary Technical InformationIXTA110N055T VDSS = 55 VTrenchMVTMIXTP110N055T ID25 = 110 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC
ixta110n055p ixtp110n055p ixtq110n055p.pdf
IXTA 110N055P VDSS = 55 VPolarHTTMIXTP 110N055P ID25 = 110 APower MOSFETIXTQ 110N055P RDS(on) 13.5 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25 C to 175 C55 V(TAB)VDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGS Continuous 20 VTO-220 (IXTP)VGSM Tranise
ixta14n60p ixtq14n60p ixtp14n60p.pdf
IXTA 14N60P VDSS = 600 VPolarHVTMIXTP 14N60P ID25 = 14 APower MOSFET IXTQ 14N60P RDS(on) 550 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VGVGS Continuous 30 V S(TAB)VGSM Tranisent 40 VID25 TC = 25C14 A
ixty1r6n50d2 ixta1r6n50d2 ixtp1r6n50d2.pdf
Preliminary Technical InformationDepletion Mode VDSX = 500VIXTY1R6N50D2MOSFET ID(on) > 1.6AIXTA1R6N50D2 RDS(on) 2.3 IXTP1R6N50D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C 100 WD (Tab)TJ -
ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf
Preliminary Technical InformationVDSS = 800VIXTA1N80PPolarTM PowerID25 = 1AIXTP1N80PMOSFET RDS(on) 14 IXTU1N80PIXTY1N80PN-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU)GG(TAB)(TAB)(TAB)S G DDSSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 150C 800 VVD
ixta16n50p ixtp16n50p ixtq16n50p.pdf
IXTA 16N50P VDSS = 500 VPolarHVTMIXTP 16N50P ID25 = 16 APower MOSFETIXTQ 16N50P RDS(on) 400 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGVGS Continuous 30 VSVGSM Transient 40 V(TAB)ID25 TC = 25C16 A
ixta12n70x2 ixtp12n70x2 ixth12n70x2.pdf
Preliminary Technical InformationX2-Class VDSS = 700VIXTA12N70X2Power MOSFET ID25 = 12AIXTP12N70X2 RDS(on) 300m IXTH12N70X2N-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C, RGS = 1M 700 VVGSS Continuous 30 V
ixta160n10t ixtp160n10t.pdf
Preliminary Technical InformationIXTA160N10T VDSS = 100 VTrenchMVTMIXTP160N10T ID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 175C 100 VTO-220 (IXTP)VDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V
ixta1n100 ixtp1n100.pdf
VDSS = 1000 VIXTA 1N100High Voltage MOSFETIXTP 1N100 ID25 = 1.5 A RDS(on) = 11 N-Channel Enhancement ModeAvalanche Energy RatedSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 30 VD (TAB)GVGSM Transient 40 VDSID25 TC = 25C 1.5 AIDM TC =
ixta182n055t ixtp182n055t.pdf
Preliminary Technical InformationIXTA182N055T VDSS = 55 VTrenchMVTMIXTP182N055T ID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 T
ixta180n10t ixtp180n10t.pdf
IXTA180N10T VDSS = 100VTrenchMVTMIXTP180N10T ID25 = 180APower MOSFET RDS(on) 6.4m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 175C 100 VTO-220 (IXTP)VDGR TJ = 25C to 175C, RGS = 1M 100 VVGSM Transient 30 VID25 TC = 25C 180 AILRMS Lead Cur
ixth15n50l2-ixtp15n50l2.pdf
Linear L2TM Power VDSS = 500VIXTH15N50L2MOSFET w/Extended ID25 = 15AIXTP15N50L2 RDS(on) 480m FBSOAN-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VG (TAB)DVDGR TJ = 25C to 150C, RGS = 1M 500 VSVGSS Continuous 20 VTO-247 (IXTH)VGSM Transient 30
ixta160n075t ixtp160n075t.pdf
Preliminary Technical InformationIXTA160N075T VDSS = 75 VTrenchMVTMIXTP160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 V S D (TAB)ID25 TC = 25C 16
ixta180n055t ixtp180n055t ixtq180n055t.pdf
Advance Technical InformationIXTQ 180N055T VDSS = 55 VTrench GateIXTA 180N055T ID25 = 180 APower MOSFETIXTP 180N055T RDS(on) = 4.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VGVDGR TJ = 25C to 175C; RGS = 1 M 55 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 180 AIDRM
ixta160n04t2 ixtp160n04t2.pdf
Preliminary Technical InformationIXTA160N04T2 VDSS = 40VTrenchT2TMIXTP160N04T2 ID25 = 160APower MOSFET RDS(on) 5m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C40 VSVDGR TJ = 25C to 175C, RGS = 1M 40 V(TAB)VGSM Transient 20 VTO-220 (IXTP)ID25 TC
ixta180n085t ixtp180n085t.pdf
Preliminary Technical InformationIXTA180N085T VDSS = 85 VTrenchMVTMIXTP180N085T ID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25 T
ixtp170n075t2.pdf
isc N-Channel MOSFET Transistor IXTP170N075T2FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
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Список транзисторов
Обновления
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