IXTQ160N10T
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Наименование прибора: IXTQ160N10T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 430
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 160
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 132
nC
trⓘ -
Время нарастания: 100
ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007
Ohm
Тип корпуса:
TO3P
Аналог (замена) для IXTQ160N10T
IXTQ160N10T
Datasheet (PDF)
..1. Size:186K ixys
ixth160n10t ixtq160n10t.pdf 
Preliminary Technical InformationIXTH160N10T VDSS = 100 VTrenchMVTMIXTQ160N10T ID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DSVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 VTO-3P (IXTQ)
6.1. Size:184K ixys
ixth160n075t ixtq160n075t.pdf 
Preliminary Technical InformationIXTH160N075T VDSS = 75 VTrenchMVTMIXTQ160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C 75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 VID25 TC = 25C 160 AD (TAB
8.1. Size:143K ixys
ixta16n50p ixtp16n50p ixtq16n50p.pdf 
IXTA 16N50P VDSS = 500 VPolarHVTMIXTP 16N50P ID25 = 16 APower MOSFETIXTQ 16N50P RDS(on) 400 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGVGS Continuous 30 VSVGSM Transient 40 V(TAB)ID25 TC = 25C16 A
9.1. Size:252K ixys
ixtk150n15p ixtq150n15p.pdf 
IXTK 150N15PPolarHTTMVDSS = 150 VIXTQ 150N15PPower MOSFETID25 = 150 A RDS(on) 13 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VGD (TAB)VGS Continuous 20 VDSVGSM Transient 30 VID25 TC = 25
9.2. Size:211K ixys
ixth182n055t ixtq182n055t.pdf 
Preliminary Technical InformationIXTH182N055T VDSS = 55 VTrenchMVTMIXTQ182N055T ID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VTO-3P
9.3. Size:166K ixys
ixtt170n10p ixtq170n10p ixtk170n10p.pdf 
PolarTM VDSS = 100VIXTT170N10PID25 = 170APower MOSFETIXTQ170N10P RDS(on) 9m IXTK170N10PTO-268 (IXTT)N-Channel Enhancement ModeAvalanche RatedGSTabTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C, RGS = 1M 100 VGDVGSS Continuous 20 VSTabVGSM Transient
9.4. Size:205K ixys
ixth180n10t ixtq180n10t.pdf 
Preliminary Technical InformationIXTH180N10T VDSS = 100 VTrenchMVTMIXTQ180N10T ID25 = 180 APower MOSFET RDS(on) 6.4 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C 100 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGSM Transient 30 VTO
9.5. Size:148K ixys
ixtq150n06p.pdf 
IXTQ 150N06P VDSS = 60 VPolarHTTMID25 = 150 APower MOSFET RDS(on) 10 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 175 C60 VVDGR TJ = 25 C to 175 C; RGS = 1 M 60 VVGS Continuous 20 VGVGSM Transient 30 VD(TAB)SID25 TC = 25 C 150 AIDRMS Ext
9.6. Size:203K ixys
ixth180n085t ixtq180n085t.pdf 
Preliminary Technical InformationIXTH180N085T VDSS = 85 VTrenchMVTMIXTQ180N085T ID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DSVDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 VTO-
9.7. Size:171K ixys
ixtq140n10p ixtt140n10p.pdf 
IXTQ 140N10P VDSS = 100 VPolarHTTMIXTT 140N10P ID25 = 140 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VVGSM Transient 30 VID25 TC = 25 C 140 AID(RMS)
9.8. Size:170K ixys
ixtq110n10p ixtt110n10p.pdf 
IXTQ 110N10P VDSS = 100 VPolarHTTMIXTT 110N10P ID25 = 110 APower MOSFET RDS(on) 15 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C 110 A(T
9.9. Size:171K ixys
ixtq18n60p ixtv18n60p.pdf 
IXTQ 18N60P VDSS = 600 VPolarHVTMIXTV 18N60P ID25 = 18 APower MOSFET IXTV 18N60PS RDS(on) 420 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 30 VGVGSM Tranisent 40 VD (TAB)DSID25 TC = 25
9.10. Size:142K ixys
ixth130n10t ixtq130n10t.pdf 
VDSS = 100VIXTH130N10TTrenchMVTMID25 = 130AIXTQ130N10TPower MOSFET RDS(on) 9.1m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 100 VD(TAB)SVDGR TJ = 25C to 175C, RGS = 1M 100 VVGSM Transient 20 VTO-3P (IXTQ)ID25 TC = 25C 130 AILRMS Lead C
9.11. Size:184K ixys
ixth152n085t ixtq152n085t.pdf 
Preliminary Technical InformationIXTH152N085T VDSS = 85 VTrenchMVTMIXTQ152N085T ID25 = 152 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 VID25 TC = 25C 152 AILRMS L
9.12. Size:254K ixys
ixta110n055p ixtp110n055p ixtq110n055p.pdf 
IXTA 110N055P VDSS = 55 VPolarHTTMIXTP 110N055P ID25 = 110 APower MOSFETIXTQ 110N055P RDS(on) 13.5 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25 C to 175 C55 V(TAB)VDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGS Continuous 20 VTO-220 (IXTP)VGSM Tranise
9.13. Size:147K ixys
ixta14n60p ixtq14n60p ixtp14n60p.pdf 
IXTA 14N60P VDSS = 600 VPolarHVTMIXTP 14N60P ID25 = 14 APower MOSFET IXTQ 14N60P RDS(on) 550 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VGVGS Continuous 30 V S(TAB)VGSM Tranisent 40 VID25 TC = 25C14 A
9.14. Size:170K ixys
ixtq130n20t.pdf 
TrenchTM VDSS = 200VIXTQ130N20TID25 = 130APower MOSFETIXTH130N20T RDS(on) 16m N-Channel Enhancement Mode TO-3P (IXTQ)Avalanche RatedFast Intrinsic RectifierGDSTabSymbol Test Conditions Maximum RatingsTO-247 ( IXTH)VDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C, RGS = 1M 200 VVGSS Continuous 20 VVGS
9.15. Size:191K ixys
ixtk120n20p ixtq120n20p.pdf 
IXTK 120N20PPolarHTTMVDSS = 200 VIXTQ 120N20PPower MOSFETID25 = 120 A RDS(on) 22 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 200 VVDGR TJ = 25 C to 175 C; RGS = 1 M 200 VGVGS Continuous 20 VD(TAB)SVGSM Transient 30 VID25 TC = 25
9.16. Size:274K ixys
ixtk100n25p ixtt100n25p ixtq100n25p.pdf 
IXTK 100N25P VDSS = 250 VPolarHTTMIXTQ 100N25P ID25 = 100 APower MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VGD (TAB)DSVGSM Transient 30 VID
9.17. Size:171K ixys
ixtq120n15p ixtt120n15p.pdf 
IXTQ 120N15P VDSS = 150 VPolarHTTMIXTT 120N15P ID25 = 120 APower MOSFET RDS(on) 16 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVDSS Continuous 20 VVGSM Transient 30 VID25 TC = 25 C 120 A GD
9.18. Size:108K ixys
ixta180n055t ixtp180n055t ixtq180n055t.pdf 
Advance Technical InformationIXTQ 180N055T VDSS = 55 VTrench GateIXTA 180N055T ID25 = 180 APower MOSFETIXTP 180N055T RDS(on) = 4.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VGVDGR TJ = 25C to 175C; RGS = 1 M 55 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 180 AIDRM
9.19. Size:233K inchange semiconductor
ixtq170n10p.pdf 
isc N-Channel MOSFET Transistor IXTQ170N10PFEATURESDrain Current I =170A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.009(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power SuppliesDC-DC Converters
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