Справочник MOSFET. IXTQ22N50P

 

IXTQ22N50P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTQ22N50P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 350 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 400 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для IXTQ22N50P

 

 

IXTQ22N50P Datasheet (PDF)

 ..1. Size:198K  ixys
 ixth22n50p ixtq22n50p ixtv22n50p.pdf

IXTQ22N50P IXTQ22N50P

IXTH 22N50P VDSS = 500 VPolarHVTMIXTQ 22N50P ID25 = 22 APower MOSFETIXTV 22N50P RDS(on) 270 m N-Channel Enhancement ModeIXTV 22N50PSAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25C to 150C 500 VSVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 30 VTO-3P (IXTQ)VGSM Trans

 ..2. Size:209K  inchange semiconductor
 ixtq22n50p.pdf

IXTQ22N50P IXTQ22N50P

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTQ22N50PFEATURESWith TO-3PN packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 7.1. Size:314K  ixys
 ixtq22n60p ixtv22n60p.pdf

IXTQ22N50P IXTQ22N50P

IXTQ 22N60P VDSS = 600 VPolarHVTMIXTV 22N60P ID25 = 22 APower MOSFET IXTV 22N60PS RDS (on) 350 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGS Continuous 30 V GD(TAB)SVGSM Tranisent 40 VID25

 8.1. Size:185K  ixys
 ixth220n075t ixtq220n075t.pdf

IXTQ22N50P IXTQ22N50P

Preliminary Technical InformationIXTH220N075T VDSS = 75 VTrenchMVTMIXTQ220N075T ID25 = 220 APower MOSFET RDS(on) 4.5 m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C75 VG(TAB)DVDGR TJ = 25C to 175C; RGS = 1 M 75 VSVGSM Transient 20 VID25 TC = 25

 8.2. Size:204K  ixys
 ixth220n055t ixtq220n055t.pdf

IXTQ22N50P IXTQ22N50P

Preliminary Technical InformationIXTH220N055T VDSS = 55 VTrenchMVTMIXTQ220N055T ID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C55 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VTO-

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top