IXTQ44P15T
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Наименование прибора: IXTQ44P15T
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 298
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 44
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 175
nC
trⓘ -
Время нарастания: 140
ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065
Ohm
Тип корпуса:
TO3P
Аналог (замена) для IXTQ44P15T
IXTQ44P15T
Datasheet (PDF)
8.1. Size:148K ixys
ixtq44n50p.pdf 
IXTQ 44N50P VDSS = 500 VPolarHVTMID25 = 44 APower MOSFET RDS(on) 140 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGS Continuous 30 VVGSM Transient 40 VGID25 TC = 25 C44 AD(TAB)IDM TC = 25
9.1. Size:89K ixys
ixtq470p2.pdf 
Advance Technical InformationPolarP2TM VDSS = 500VIXTQ470P2ID25 = 42APower MOSFET RDS(on) 145m trr(typ) = 400nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-3PSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VGDVGSS Continuous 30 VSTabVGSM
9.2. Size:154K ixys
ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf 
PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V
9.3. Size:156K ixys
ixta460p2 ixtp460p2 ixtq460p2 ixth460p2.pdf 
PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V
9.4. Size:111K ixys
ixtp450p2 ixth450p2 ixtq450p2.pdf 
Advance Technical InformationPolarP2TM VDSS = 500VIXTP450P2ID25 = 16APower MOSFETIXTQ450P2 RDS(on) 330m IXTH450P2trr(typ) = 400nsN-Channel Enhancement ModeAvalanche RatedTO-220AB (IXTP)Fast Intrinsic DiodeGDTabSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RG
9.5. Size:89K ixys
ixtq480p2.pdf 
Advance Technical InformationPolarP2TM VDSS = 500VIXTQ480P2ID25 = 52APower MOSFET RDS(on) 120m trr(typ) = 400nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-3PSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VGDVGSS Continuous 30 VSTabVGSM
9.6. Size:252K ixys
ixta42n25p ixtp42n25p ixtq42n25p.pdf 
IXTA 42N25P VDSS = 250 VPolarHTTMIXTP 42N25P ID25 = 42 APower MOSFET IXTQ 42N25P RDS(on) 84 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C 250 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB)VGS Continuous 20 VTO-220 (IXTP)VGSM Transient 3
9.7. Size:257K inchange semiconductor
ixtq460p2.pdf 
isc N-Channel MOSFET Transistor IXTQ460P2FEATURESWith TO-3P packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
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