3SK193Q - Даташиты. Аналоги. Основные параметры
Наименование производителя: 3SK193Q
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.15 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 15 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.03 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 83 Ohm
Тип корпуса: MINI-TYPE
Аналог (замена) для 3SK193Q
3SK193Q Datasheet (PDF)
3sk192p 3sk192q.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten
3sk194.pdf
3SK194Silicon N-Channel Dual Gate MOS FETApplicationVHF/UHF TV tuner RF amplifierOutlineMPAK-42311. Source42. Gate13. Gate24. Drain3SK194Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 15 VGate 1 to source voltage VG1S 10 VGate 2 to source voltage VG2S 10 VDrain current ID 35 mAChannel power dissipation Pc
3sk199.pdf
3SK199 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK199 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: C = 0.015 pF (typ.) rss Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 13
Другие MOSFET... 3SK181-4 , 3SK181-5 , 3SK181-6 , 3SK182 , 3SK186 , 3SK192P , 3SK192Q , 3SK193P , IRF630 , 3SK194 , 3SK202Q , 3SK202R , 3SK206 , 3SK222 , 3SK219 , 3SK223 , 3SK224 .
History: RSQ020N03FRA | RJK5002DJE | FDMD8530 | FDD9507L-F085 | RJK5013DPP-E0
History: RSQ020N03FRA | RJK5002DJE | FDMD8530 | FDD9507L-F085 | RJK5013DPP-E0
Список транзисторов
Обновления
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