Справочник MOSFET. IXTQ88N28T

 

IXTQ88N28T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IXTQ88N28T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 280 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 88 A
   tr ⓘ - Время нарастания: 200 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.044 Ohm
   Тип корпуса: TO3P
 

 Аналог (замена) для IXTQ88N28T

   - подбор ⓘ MOSFET транзистора по параметрам

 

IXTQ88N28T Datasheet (PDF)

 7.1. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTQ88N28T

IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)

 7.2. Size:365K  ixys
 ixth88n30p ixtk88n30p ixtq88n30p ixtt88n30p.pdf pdf_icon

IXTQ88N28T

IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)

 9.1. Size:90K  ixys
 ixtq80n28t.pdf pdf_icon

IXTQ88N28T

Advance Technical Infomation IXTQ 80N28TIXTQ 80N28T VDSS = 280 VTrench GateID25 = 80 APower MOSFETRDS(on) = 49 mN-Channel Enhancement ModeFor Plasma Display ApplicationsSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 280 VVDGR TJ = 25C to 150C; RGS = 1 M 280 VVGSM 30 VID25 TC = 25C80 AGIDRMS External lead cu

 9.2. Size:159K  ixys
 ixtt82n25p ixtq82n25p ixtk82n25p.pdf pdf_icon

IXTQ88N28T

VDSS = 250VIXTT82N25PPolarTMID25 = 82AIXTQ82N25PPower MOSFET RDS(on) 38m IXTK82N25PTO-268 (IXTT)N-Channel Enhancement ModeGAvalanche RatedSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 250 VTO-3P( IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Continuous 20 VGVGSM Transient

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IXTQ69N30P , IXTQ69N30PM , IXTQ74N20P , IXTQ75N10P , IXTQ76N25T , IXTQ82N25P , IXTQ86N20T , IXTQ86N25T , STP65NF06 , IXTQ88N30P , IXTQ90N15T , IXTQ96N15P , IXTQ96N20P , IXTQ96N25T , IXTR16P60P , IXTR170P10P , IXTR200N10P .

History: CHM634PAGP | NVMFS5A140PLZ | ZXMN6A07F

 

 
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