Справочник MOSFET. IXTQ88N28T

 

IXTQ88N28T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTQ88N28T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 280 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 88 A
   Qgⓘ - Общий заряд затвора: 138 nC
   trⓘ - Время нарастания: 200 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.044 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для IXTQ88N28T

 

 

IXTQ88N28T Datasheet (PDF)

 7.1. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf

IXTQ88N28T IXTQ88N28T

IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)

 7.2. Size:365K  ixys
 ixth88n30p ixtk88n30p ixtq88n30p ixtt88n30p.pdf

IXTQ88N28T IXTQ88N28T

IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)

 9.1. Size:90K  ixys
 ixtq80n28t.pdf

IXTQ88N28T IXTQ88N28T

Advance Technical Infomation IXTQ 80N28TIXTQ 80N28T VDSS = 280 VTrench GateID25 = 80 APower MOSFETRDS(on) = 49 mN-Channel Enhancement ModeFor Plasma Display ApplicationsSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 280 VVDGR TJ = 25C to 150C; RGS = 1 M 280 VVGSM 30 VID25 TC = 25C80 AGIDRMS External lead cu

 9.2. Size:159K  ixys
 ixtt82n25p ixtq82n25p ixtk82n25p.pdf

IXTQ88N28T IXTQ88N28T

VDSS = 250VIXTT82N25PPolarTMID25 = 82AIXTQ82N25PPower MOSFET RDS(on) 38m IXTK82N25PTO-268 (IXTT)N-Channel Enhancement ModeGAvalanche RatedSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 250 VTO-3P( IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Continuous 20 VGVGSM Transient

 9.3. Size:294K  ixys
 ixtk82n25p ixtq82n25p ixtt82n25p.pdf

IXTQ88N28T IXTQ88N28T

IXTK 82N25P VDSS = 250 VPolarHTTMIXTQ 82N25P ID25 = 82 APower MOSFET IXTT 82N25P RDS(on) 35 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top