IXTQ88N28T datasheet, подбор замены

 7.1. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf 

IXTH 88N30P VDSS = 300 V PolarHTTM IXTK 88N30P ID25 = 88 A Power MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V TO-264 (IXTK)

 7.2. Size:365K  ixys
 ixth88n30p ixtk88n30p ixtq88n30p ixtt88n30p.pdf 

IXTH 88N30P VDSS = 300 V PolarHTTM IXTK 88N30P ID25 = 88 A Power MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V TO-264 (IXTK)

 9.1. Size:90K  ixys
 ixtq80n28t.pdf 

Advance Technical Infomation IXTQ 80N28T IXTQ 80N28T VDSS = 280 V Trench Gate ID25 = 80 A Power MOSFET RDS(on) = 49 m N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 280 V VDGR TJ = 25 C to 150 C; RGS = 1 M 280 V VGSM 30 V ID25 TC = 25 C80 A G IDRMS External lead cu

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 ixtt82n25p ixtq82n25p ixtk82n25p.pdf 

 9.3. Size:294K  ixys
 ixtk82n25p ixtq82n25p ixtt82n25p.pdf 

IXTK 82N25P VDSS = 250 V PolarHTTM IXTQ 82N25P ID25 = 82 A Power MOSFET IXTT 82N25P RDS(on) 35 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25