Справочник MOSFET. IXTT26N50P

 

IXTT26N50P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTT26N50P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 400 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 26 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 65 nC
   trⓘ - Время нарастания: 300 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm
   Тип корпуса: TO268

 Аналог (замена) для IXTT26N50P

 

 

IXTT26N50P Datasheet (PDF)

 ..1. Size:338K  ixys
 ixtq26n50p ixtt26n50p ixtv26n50p.pdf

IXTT26N50P IXTT26N50P

IXTQ 26N50P VDSS = 500 VPolarHVTMIXTT 26N50P ID25 = 26 APower MOSFET IXTV 26N50P RDS(on) 230 m IXTV 26N50PSN-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C 500 VDS D (TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VTO-268 (IXTT)VGSS Continuos 30 V

 7.1. Size:230K  ixys
 ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf

IXTT26N50P IXTT26N50P

IXTH26N60P VDSS = 600 VPolarHVTMIXTQ26N60P ID25 = 26 APower MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement ModeIXTV26N60PAvalanche RatedTO-247 (IXTH)IXTV26N60PSGDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-3P (IXTQ)VDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Tran

 9.1. Size:202K  ixys
 ixth2n300p3hv ixtt2n300p3hv.pdf

IXTT26N50P IXTT26N50P

Advance Technical InformationHigh Voltage VDSS = 3000VIXTT2N300P3HVPower MOSFETID25 = 2AIXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VV

 9.2. Size:337K  ixys
 ixtt240n15x4hv ixth240n15x4.pdf

IXTT26N50P IXTT26N50P

Advance Technical InformationX4-Class VDSS = 150VIXTT240N15X4HVPower MOSFETTM ID25 = 240AIXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXTT..HV)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 175C 150 V D (Tab)VDGR TJ = 25C to 175C, RGS = 1M 150 VTO-247 (IXTH)VGSS Cont

 9.3. Size:172K  ixys
 ixth2n170d2 ixtt2n170d2.pdf

IXTT26N50P IXTT26N50P

Depletion Mode VDSX = 1700VIXTT2N170D2MOSFETs ID(on) > 2AIXTH2N170D2 RDS(on) 6.5 N-ChannelTO-268 (IXTT)GSD (Tab)TO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1700 VVDGX TJ = 25C to 150C, RGS = 1M 1700 VVGSX Continuous 20 VGVGSM Transient 30 VDD (Tab)SPD TC = 25C 568 WG = Gate

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