Справочник MOSFET. IXTT75N10L2

 

IXTT75N10L2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTT75N10L2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 400 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 180 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm
   Тип корпуса: TO268

 Аналог (замена) для IXTT75N10L2

 

 

IXTT75N10L2 Datasheet (PDF)

 ..1. Size:139K  ixys
 ixth75n10l2 ixtt75n10l2.pdf

IXTT75N10L2 IXTT75N10L2

Advance Technical InformationLinearL2TM Power VDSS = 100VIXTH75N10L2MOSFET w/extended ID25 = 75AIXTT75N10L2 RDS(on) 21m FBSOADDDDO DON-Channel Enhancement ModeRGiGuaranteed FBSOAwwG OAvalanche RatedTO-247 (IXTH)OSSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 100 V DD (Tab)SVDGR TJ = 25

 5.1. Size:579K  ixys
 ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf

IXTT75N10L2 IXTT75N10L2

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 67N10100 V 67 A 25 mIXTH / IXTM 75N10100 V 75 A 20 mIXTT 75N10N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VTO-204 AE (IXTM)VGS Continuous 20 VVGSM Transient 30

 6.1. Size:583K  ixys
 ixth75n15 ixtt75n15.pdf

IXTT75N10L2 IXTT75N10L2

IXTH 75N15 VDSS = 150 VHigh CurrentIXTT 75N15 ID25 = 75 APower MOSFET RDS(on) = 23 mN-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 M 150 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C75 AIDM TC = 25C, pulse width limited by T

 9.1. Size:170K  ixys
 ixtq74n20p ixtt74n20p.pdf

IXTT75N10L2 IXTT75N10L2

IXTQ 74N20P VDSS = 200 VPolarHTTMIXTT 74N20P ID25 = 74 APower MOSFET RDS(on) 34 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 200 VVDGR TJ = 25 C to 175 C; RGS = 1 M 200 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C74 A(TAB

 9.2. Size:112K  ixys
 ixtt72n10 ixth72n10.pdf

IXTT75N10L2 IXTT75N10L2

Advance Technical InformationIXTH 72N20 VDSS = 200 VHigh CurrentIXTT 72N20 ID25 = 72 APower MOSFET RDS(on) = 33 mN-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C72 AIDM TC =

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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