Справочник MOSFET. 3SK227

 

3SK227 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 3SK227
   Маркировка: CX
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 15 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.03 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 1.1 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 48 Ohm
   Тип корпуса: MINI-TYPE

 Аналог (замена) для 3SK227

 

 

3SK227 Datasheet (PDF)

 ..1. Size:30K  panasonic
 3sk227.pdf

3SK227 3SK227

High Frequency FETs 3SK2273SK227Silicon N-Channel 4-pin MOSUnit : mmFor VHF amplification+0.22.8 0.3+0.20.65 0.15 1.5 0.3 0.65 0.15 Features Low noise-figure (NF)0.5R4 1 Large power gain PG Downsizing of sets by mini power package and automatic insertionby taping/magazine packing are available.3 2 Absolute Maximum Ratings (Ta = 25C)0.4 0.2Para

 9.1. Size:43K  1
 3sk222.pdf

3SK227 3SK227

DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK222RF AMPLIFIER FOR FM TUNER AND VHF TV TUNERN-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good.(Unit: mm)CM = 92 dB TYP. @ f = 200 MHz, GR = 30 dB2.8+0.2 0.3 Low Noise Figure: NF1 = 1.2 dB TYP. (f = 200 MHz)1.5+0.2 0.1

 9.2. Size:43K  1
 3sk223.pdf

3SK227 3SK227

DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK223RF AMPLIFIER FOR CATV TUNERN-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURES PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. (Unit: mm)CM = 101 dB TYP. @ f = 470 MHz, GR = 30 dB2.8+0.2 0.3 Low Noise Figure: NF1 = 2.2 dB TYP. (f = 470 MHz)1.5+0.2 0.3NF2 = 0.9 dB TYP

 9.3. Size:43K  1
 3sk224.pdf

3SK227 3SK227

DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK224RF AMPLIFIER FOR UHF TV TUNERN-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise Figure: NF = 1.8 dB TYP. (f = 900 MHz)(Unit: mm) High Power Gain: GPS = 17 dB TYP. (f = 900 MHz)2.8+0.2 Suitable for use as RF amplifier in UHF TV tuner. 0.11.5+0.2 0.1 Auto

 9.4. Size:177K  toshiba
 3sk225.pdf

3SK227 3SK227

3SK225 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK225 TV Tuner, VHF RF Amplifier Applications Unit: mmFM Tuner Applications TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. Low noise figure: NF = 2.0dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 1

 9.5. Size:189K  toshiba
 3sk226.pdf

3SK227 3SK227

3SK226 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK226 TV Tuner, VHF RF Amplifier Applications Unit: mmFM Tuner Applications Superior cross modulation performance. Low reverse transfer capacitance: C = 0.015 pF (typ.) rss Low noise figure: NF = 1.1dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDra

Другие MOSFET... 3SK194 , 3SK202Q , 3SK202R , 3SK206 , 3SK222 , 3SK219 , 3SK223 , 3SK224 , AO4407 , 3SK37 , 3SK38 , 3SK38A , 3SK39 , 3SK40 , 3SK41 , 3SK44 , 3SK45 .

 

 
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