Справочник MOSFET. IXTV36N50PS

 

IXTV36N50PS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTV36N50PS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 540 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 400 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
   Тип корпуса: PLUS220SMD

 Аналог (замена) для IXTV36N50PS

 

 

IXTV36N50PS Datasheet (PDF)

 ..1. Size:402K  ixys
 ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p ixtv36n50ps.pdf

IXTV36N50PS IXTV36N50PS

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

 4.1. Size:361K  ixys
 ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p.pdf

IXTV36N50PS IXTV36N50PS

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

 9.1. Size:336K  ixys
 ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf

IXTV36N50PS IXTV36N50PS

VDSS = 500 VIXTH 30N50PPolarHVTMID25 = 30 AIXTQ 30N50PPower MOSFET RDS(on) 200 m IXTT 30N50PN-Channel Enhancement ModeIXTV 30N50PAvalanche RatedIXTV 30N50PSTO-247 AD (IXTH)(TAB)Symbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo

 9.2. Size:352K  ixys
 ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p.pdf

IXTV36N50PS IXTV36N50PS

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient

 9.3. Size:392K  ixys
 ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p ixtv30n60ps.pdf

IXTV36N50PS IXTV36N50PS

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient

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