Справочник MOSFET. IXTY12N06T

 

IXTY12N06T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTY12N06T
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 33 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 12 A
   Максимальная температура канала (Tj): 175 °C
   Время нарастания (tr): 30 ns
   Сопротивление сток-исток открытого транзистора (Rds): 0.085 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IXTY12N06T

 

 

IXTY12N06T Datasheet (PDF)

 9.1. Size:91K  ixys
 ixtp1r6n50p ixty1r6n50p.pdf

IXTY12N06T IXTY12N06T

IXTP 1R6N50P VDSS = 500 VPolarHVTMIXTY 1R6N50P ID25 = 1.6 APower MOSFET RDS(on) 6.5 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 30 VG(TAB)DVGSM Transient 40 VSID25 TC = 25C 1.6 AIDM

 9.2. Size:123K  ixys
 ixty1r4n120p.pdf

IXTY12N06T IXTY12N06T

PolarTM VDSS = 1200VIXTY1R4N120PPower MOSFETs ID25 = 1.4AIXTA1R4N120P RDS(on) 13 IXTP1R4N120PTO-252 (IXTY)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSD (Tab)TO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VGVDGR TJ = 25C to 150C, RGS = 1M 1200 VSVGSS Contin

 9.3. Size:60K  ixys
 ixta1n80 ixtp1n80 ixty1n80.pdf

IXTY12N06T IXTY12N06T

IXTA 1N80VDSS = 800 VHigh Voltage MOSFETIXTP 1N80ID25 = 750 mAIXTY 1N80N-Channel Enhancement ModeRDS(on) = 11 Avalanche Energy RatedPreliminary DataSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VGDSVGSM Transient 30 VID25 T

 9.4. Size:179K  ixys
 ixty1r6n50d2 ixta1r6n50d2 ixtp1r6n50d2.pdf

IXTY12N06T IXTY12N06T

Preliminary Technical InformationDepletion Mode VDSX = 500VIXTY1R6N50D2MOSFET ID(on) > 1.6AIXTA1R6N50D2 RDS(on) 2.3 IXTP1R6N50D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C 100 WD (Tab)TJ -

 9.5. Size:161K  ixys
 ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf

IXTY12N06T IXTY12N06T

Preliminary Technical InformationVDSS = 800VIXTA1N80PPolarTM PowerID25 = 1AIXTP1N80PMOSFET RDS(on) 14 IXTU1N80PIXTY1N80PN-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU)GG(TAB)(TAB)(TAB)S G DDSSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 150C 800 VVD

 9.6. Size:123K  ixys
 ixty1n120p.pdf

IXTY12N06T IXTY12N06T

PolarTM VDSS = 1200VIXTY1N120PPower MOSFETs ID25 = 1AIXTA1N120P RDS(on) 20 IXTP1N120PTO-252 (IXTY)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSD (Tab)TO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VGVDGR TJ = 25C to 150C, RGS = 1M 1200 VSVGSS Continuous 2

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