2N7002BKT. Аналоги и основные параметры

Наименование производителя: 2N7002BKT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.26 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.29 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm

Тип корпуса: SC75

Аналог (замена) для 2N7002BKT

- подборⓘ MOSFET транзистора по параметрам

 

2N7002BKT даташит

 ..1. Size:334K  philips
2n7002bkt.pdfpdf_icon

2N7002BKT

2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technol

 6.1. Size:236K  toshiba
t2n7002bk.pdfpdf_icon

2N7002BKT

T2N7002BK MOSFETs Silicon N-Channel MOS T2N7002BK T2N7002BK T2N7002BK T2N7002BK 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2

 6.2. Size:477K  nxp
2n7002bks.pdfpdf_icon

2N7002BKT

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.3. Size:921K  nxp
2n7002bkv.pdfpdf_icon

2N7002BKT

2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trenc

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