BF1108R - описание и поиск аналогов

 ..1. Size:64K  philips
 bf1108 bf1108r.pdf 

BF1108; BF1108R Silicon RF switches Rev. 04 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions.

 ..2. Size:67K  philips
 bf1108 bf1108r 3.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1108; BF1108R Silicon RF switches Product specification 1999 Nov 18 Supersedes data of 1999 Aug 19 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R FEATURES Specially designed for low loss RF switching up to 1 GHz. handbook, 2 columns 43 APPLICATIONS Various RF switching applications such as 12 Pa

 9.1. Size:439K  philips
 bf1100wr.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25 NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain

 9.2. Size:351K  philips
 bf1105 r wr.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 02 Supersedes data of 1997 Dec 01 NXP Semiconductors Product specification BF1105; BF1105R; N-channel dual-gate MOS-FETs BF1105WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admittance to

 9.3. Size:311K  philips
 bf1100 n.pdf 

BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ht

 9.4. Size:135K  philips
 bf1101 bf1101r bf1101wr 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification 1999 May 14 Supersedes data of 1999 Feb 01 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admittance to i

 9.5. Size:100K  philips
 bf1100wr 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

 9.6. Size:60K  philips
 bf1107 bf1107w 3.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1107; BF1107W N-channel single gate MOS-FETs Product specification 1999 May 14 Supersedes data of 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W FEATURES Currentless RF switch. handbook, halfpage 3 APPLICATIONS Various RF switching applications such as 12 - Passive loop through

 9.7. Size:159K  philips
 bf1100 bf1100r 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R and substrate interconnected and an internal bias circuit to FEATURES ensure good cross-modulation performance during AGC. Speciall

 9.8. Size:114K  philips
 bf1109 bf1109r bf1109wr 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 08 Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 colu

 9.9. Size:347K  philips
 bf1109 r wr.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 08 Supersedes data of 1997 Sep 03 NXP Semiconductors Product specification BF1109; BF1109R; N-channel dual-gate MOS-FETs BF1109WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admittance to

 9.10. Size:127K  philips
 bf1102 bf1102r 3.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification 2000 Apr 11 Supersedes data of 1999 Jul 01 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single DESCRIPTION package PIN BF1102

 9.11. Size:146K  philips
 bf1100wr 0.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

 9.12. Size:119K  philips
 bf1105 bf1105r bf1105wr 3.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 02 Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1105; BF1105R; BF1105WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 col

 9.13. Size:53K  philips
 bf1107 2.pdf 

BF1107 N-channel single gate MOSFET Rev. 04 9 January 2007 Product data sheet 1. Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against ex

 9.14. Size:373K  philips
 bf1101 r wr.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification 1999 May 14 Supersedes data of 1999 Feb 01 NXP Semiconductors Product specification BF1101; BF1101R; N-channel dual-gate MOS-FETs BF1101WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admittance to

 9.15. Size:109K  philips
 bf1100 bf1100r 01.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R and substrate interconnected and an internal bias circuit to FEATURES ensure good cross-modulation performance during AGC. Speciall

 9.16. Size:370K  philips
 bf1102 r.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification 2000 Apr 11 Supersedes data of 1999 Jul 01 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single DESCRIPTION package PIN BF1102