BF1203
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BF1203
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.2
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 10
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.03
A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 30
Ohm
Тип корпуса:
SOT363
Аналог (замена) для BF1203
BF1203
Datasheet (PDF)
..1. Size:560K philips
bf1203.pdf 
DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1203Dual N-channel dual gate MOS-FETProduct specification 2001 Apr 25Supersedes data of 2000 Dec 04NXP Semiconductors Product specificationDual N-channel dual gate MOS-FET BF1203FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage1 gate 1 (a) Super
9.1. Size:405K philips
bf1201 r wr.pdf 
DISCRETE SEMICONDUCTORS DATA SHEETBF1201; BF1201R; BF1201WRN-channel dual-gate PoLo MOS-FETsProduct specification 2000 Mar 29Supersedes data of 1999 Dec 01NXP Semiconductors Product specificationBF1201; BF1201R;N-channel dual-gate PoLo MOS-FETsBF1201WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer ad
9.2. Size:253K philips
bf1208d.pdf 
BF1208DDual N-channel dual gate MOSFETRev. 01 16 May 2007 Product data sheet1. Product profile1.1 General descriptionThe BF1208D is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads and an integrated switch. The integrated switch is operated by the gate1bias of amplifier B.The source and substrate are interconnected. Internal bias circuits en
9.3. Size:626K philips
bf1205.pdf 
DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1205Dual N-channel dual gate MOS-FETProduct specification 2003 Sep 30NXP Semiconductors Product specificationDual N-channel dual gate MOS-FET BF1205FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage. One with a fully integrated bias and one with a 1gate
9.4. Size:177K philips
bf1202 r wr.pdf 
DISCRETE SEMICONDUCTORS DATA SHEETBF1202; BF1202R; BF1202WRN-channel dual-gate PoLo MOS-FETsProduct specification 2010 Sep 16Supersedes data of 2000 Mar 29NXP Semiconductors Product specificationN-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer admi
9.5. Size:160K philips
bf1207.pdf 
BF1207Dual N-channel dual gate MOSFETRev. 01 28 July 2005 Product data sheet1. Product profile1.1 General descriptionThe BF1207 is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads and an integrated switch.The source and substrate are interconnected. Internal bias circuits enable Direct Current(DC) stabilization and a very good cross-modulati
9.6. Size:121K philips
bf1201 bf1201r bf1201wr 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETBF1201; BF1201R; BF1201WRN-channel dual-gate PoLoMOS-FETsProduct specification 2000 Mar 29Supersedes data of 1999 Dec 01Philips Semiconductors Product specificationBF1201; BF1201R;N-channel dual-gate PoLo MOS-FETsBF1201WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer ad
9.7. Size:159K philips
bf1204.pdf 
DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1204Dual N-channel dual gate MOS-FETProduct specification 2010 Sep 16Supersedes data of 2001 Apr 25NXP Semiconductors Product specificationDual N-channel dual gate MOS-FET BF1204FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage1gate 1 (a) Superi
9.8. Size:171K philips
bf1205c.pdf 
BF1205CDual N-channel dual gate MOS-FETRev. 02 15 August 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1205C is a combination of two dual gate MOS-FET amplifiers with shared sourceand gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1bias of amplifier b.The source and substrate are interconnected. Internal bias circ
9.9. Size:205K philips
bf1206f.pdf 
BF1206FDual N-channel dual gate MOSFETRev. 01 30 January 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1206F is a combination of two different dual gate MOSFET amplifiers with sharedsource and gate2 leads.The source and substrate are interconnected. Internal bias circuits enable Direct Current(DC) stabilization and a very good cross-modulation perform
9.10. Size:628K philips
bf1206.pdf 
DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1206Dual N-channel dual-gate MOS-FETProduct specification 2003 Nov 17NXP Semiconductors Product specificationDual N-channel dual-gate MOS-FET BF1206FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage1 drain (b) Superior cross-modulation performance
9.11. Size:123K philips
bf1202 bf1202r bf1202wr 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETBF1202; BF1202R; BF1202WRN-channel dual-gate PoLoMOS-FETsProduct specification 2000 Mar 29Supersedes data of 1999 Dec 01Philips Semiconductors Product specificationBF1202; BF1202R;N-channel dual-gate PoLo MOS-FETsBF1202WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer ad
9.12. Size:462K cn leading energy
legm75bf120l5h.pdf 
Mar.2020 LEGM75BF120L5H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame
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