Справочник MOSFET. BLA1011S-200

 

BLA1011S-200 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLA1011S-200
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 700 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 36 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 45 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: SOT502B

 Аналог (замена) для BLA1011S-200

 

 

BLA1011S-200 Datasheet (PDF)

 ..1. Size:76K  philips
bla1011-200 bla1011s-200.pdf

BLA1011S-200
BLA1011S-200

BLA1011-200; BLA1011S-200Avionics LDMOS transistorRev. 08 26 October 2005 Product data sheet1. Product profile1.1 General description200 W LDMOS avionics power transistor for transmitter applications at frequencies from1030 MHz to 1090 MHz.Table 1: Typical performanceRF performance at Th = 25 C in a common source class-AB test circuit; IDq = 150 mA; typicalvalues.Mode

 7.1. Size:83K  philips
bla1011-200 n 1.pdf

BLA1011S-200
BLA1011S-200

DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D379BLA1011-200Avionics LDMOS transistorPreliminary specification 2000 Aug 02Philips Semiconductors Preliminary specificationAvionics LDMOS transistor BLA1011-200FEATURES PINNING - SOT502A High power gainPIN DESCRIPTION Easy power control1drain Excellent ruggedness2gate Source on mounting base elimin

 7.2. Size:73K  philips
bla1011-2.pdf

BLA1011S-200
BLA1011S-200

DISCRETE SEMICONDUCTORSDATA SHEETM3D438BLA1011-2Avionics LDMOS transistorProduct specification 2003 Nov 19Supersedes data of 2002 Oct 02Philips Semiconductors Product specificationAvionics LDMOS transistor BLA1011-2FEATURES PINNING - SOT538A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base el

 7.3. Size:65K  philips
bla1011-300.pdf

BLA1011S-200
BLA1011S-200

BLA1011-300Avionics LDMOS transistorsRev. 02 5 February 2008 Product data sheet1. Product profile1.1 General description300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from1030 MHz to 1090 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit; tp =50 s; =2%.Mode of operati

 7.4. Size:72K  philips
bla1011-10.pdf

BLA1011S-200
BLA1011S-200

DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLA1011-10Avionics LDMOS transistorProduct specification 2003 Nov 19Supersedes data of 2002 Oct 02Philips Semiconductors Product specificationAvionics LDMOS transistor BLA1011-10FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base

Другие MOSFET... BF904AWR , BLA0912-250 , BLA0912-250R , BLA1011-10 , BLA1011-2 , BLA1011-200 , BLA1011-200R , BLA1011-300 , 2SK3568 , BLA1011S-200R , BLA6G1011-200R , BLA6H0912-500 , BLA6H1011-600 , BLD6G21L-50 , BLD6G21LS-50 , BLD6G22L-50 , BLD6G22LS-50 .

 

 
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