DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLF202HF/VHF power MOS transistorProduct specification 1999 Oct 20Philips Semiconductors Product specificationHF/VHF power MOS transistor BLF202FEATURES PINNING - SOT409A High power gainPIN DESCRIPTION Easy power control1, 8 source Gold metallization2, 3 gate Good thermal stability4, 5 source Withstands ful

DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D379BLF2022-70UHF power LDMOS transistorPreliminary specification 2000 Sep 21Philips Semiconductors Preliminary specificationUHF power LDMOS transistor BLF2022-70FEATURES PINNING High power gainPIN DESCRIPTION Easy power control1drain Excellent ruggedness2gate Designed for broadband operation (2.0 t

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D438BLF2043UHF power LDMOS transistorObjective specification 2000 Feb 23Supersedes data of 2000 Feb 17Philips Semiconductors Objective specificationUHF power LDMOS transistor BLF2043FEATURES PINNING - SOT538A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source o

DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLF2043FUHF power LDMOS transistorProduct specification 2002 Mar 05Supersedes data of 2000 Oct 19Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2043FFEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base el

DISCRETE SEMICONDUCTORSDATA SHEETM3D438BLF2043UHF power LDMOS transistorProduct specification 2003 Feb 10Supersedes data of 2002 Sep 10Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2043FEATURES PINNING - SOT538A Typical 2-tone performance at a supply voltage of 26 VPIN DESCRIPTIONand IDQ of 85 mA:1 drain Output power = 10 W (PEP)2

DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLF2045UHF power LDMOS transistorProduct specification 2000 Feb 17Supersedes data of 2000 Jan 04Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2045FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on underside eliminat

DISCRETE SEMICONDUCTORS DATA SHEETM3D427BLF2048UHF push-pull power LDMOS transistorPreliminary specification 2000 May 24Philips Semiconductors Preliminary specificationUHF push-pull power LDMOS transistor BLF2048FEATURES PINNING - SOT539A High power gainPIN DESCRIPTION Easy power control1drain 1 Excellent ruggedness2drain 2 Source on underside elimi

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLF2047LUHF power LDMOS transistorProduct specification 1999 Dec 06Supersedes data of 1999 Apr 01Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2047LFEATURES PINNING High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on underside

DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLF2045UHF power LDMOS transistorProduct specification 2004 Feb 11Supersedes data of 2003 Feb 27Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2045FEATURES PINNING Typical 2-tone performance at a supply voltage of 26 VPIN DESCRIPTIONand IDQ of 500 mA1 drain Output power = 30 W (PEP)2 gate

BLF6G20-180RN;BLF6G20LS-180RNPower LDMOS transistorRev. 01 17 November 2008 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLF2047UHF power LDMOS transistorProduct specification 1999 Dec 02Supersedes data of 1999 Jul 01Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2047FEATURES PINNING High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on underside el

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLF2047L/90UHF power LDMOS transistorProduct specification 2000 Mar 06Supersedes data of 2000 Feb 17Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2047L/90FEATURES PINNING High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on unde

DISCRETE SEMICONDUCTORS DATA SHEETM3D381BLF2043FUHF power LDMOS transistorPreliminary specification 2000 Oct 19Philips Semiconductors Preliminary specificationUHF power LDMOS transistor BLF2043FFEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1drain Excellent ruggedness2gate Source on mounting base eliminates DC isolators,