BLF202 - описание и поиск аналогов

 ..1. Size:84K  philips
 blf202.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLF202 HF/VHF power MOS transistor Product specification 1999 Oct 20 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 FEATURES PINNING - SOT409A High power gain PIN DESCRIPTION Easy power control 1, 8 source Gold metallization 2, 3 gate Good thermal stability 4, 5 source Withstands ful

 0.1. Size:131K  philips
 blf2022-70.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Preliminary specification 2000 Sep 21 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-70 FEATURES PINNING High power gain PIN DESCRIPTION Easy power control 1drain Excellent ruggedness 2gate Designed for broadband operation (2.0 t

 9.1. Size:54K  philips
 blf2043 3.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF2043 UHF power LDMOS transistor Objective specification 2000 Feb 23 Supersedes data of 2000 Feb 17 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2043 FEATURES PINNING - SOT538A High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source o

 9.2. Size:98K  philips
 blf2043f.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2043F UHF power LDMOS transistor Product specification 2002 Mar 05 Supersedes data of 2000 Oct 19 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043F FEATURES PINNING - SOT467C High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source on mounting base el

 9.3. Size:100K  philips
 blf2043.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF2043 UHF power LDMOS transistor Product specification 2003 Feb 10 Supersedes data of 2002 Sep 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 FEATURES PINNING - SOT538A Typical 2-tone performance at a supply voltage of 26 V PIN DESCRIPTION and IDQ of 85 mA 1 drain Output power = 10 W (PEP) 2

 9.4. Size:99K  philips
 blf2045 4.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2045 UHF power LDMOS transistor Product specification 2000 Feb 17 Supersedes data of 2000 Jan 04 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 FEATURES PINNING - SOT467C High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source on underside eliminat

 9.5. Size:243K  philips
 blf2048.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 2000 May 24 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2048 FEATURES PINNING - SOT539A High power gain PIN DESCRIPTION Easy power control 1drain 1 Excellent ruggedness 2drain 2 Source on underside elimi

 9.6. Size:100K  philips
 blf2047l.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047L UHF power LDMOS transistor Product specification 1999 Dec 06 Supersedes data of 1999 Apr 01 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L FEATURES PINNING High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source on underside

 9.7. Size:108K  philips
 blf2045.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2045 UHF power LDMOS transistor Product specification 2004 Feb 11 Supersedes data of 2003 Feb 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 FEATURES PINNING Typical 2-tone performance at a supply voltage of 26 V PIN DESCRIPTION and IDQ of 500 mA 1 drain Output power = 30 W (PEP) 2 gate

 9.8. Size:103K  philips
 blf6g20-180rn blf20ls-180rn.pdf 

BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 17 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

 9.9. Size:108K  philips
 blf2047.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047 UHF power LDMOS transistor Product specification 1999 Dec 02 Supersedes data of 1999 Jul 01 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047 FEATURES PINNING High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source on underside el

 9.10. Size:110K  philips
 blf2047l 90 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047L/90 UHF power LDMOS transistor Product specification 2000 Mar 06 Supersedes data of 2000 Feb 17 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L/90 FEATURES PINNING High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source on unde

 9.11. Size:150K  philips
 blf2043f n 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2043F UHF power LDMOS transistor Preliminary specification 2000 Oct 19 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F FEATURES PINNING - SOT467C High power gain PIN DESCRIPTION Easy power control 1drain Excellent ruggedness 2gate Source on mounting base eliminates DC isolators,