Справочник MOSFET. BLF571

 

BLF571 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLF571
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 20 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.34 Ohm
   Тип корпуса: SOT467C
     - подбор MOSFET транзистора по параметрам

 

BLF571 Datasheet (PDF)

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BLF571

BLF571HF / VHF power LDMOS transistorRev. 02 24 February 2009 Product data sheet1. Product profile1.1 General descriptionA 20 W LDMOS RF transistor for broadcast applications and industrial applications in theHF and VHF band.Table 1. Production test performanceMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 20 27.5 70CAUTIONThis device is sensitive t

 9.1. Size:320K  philips
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BLF571

BLF578Power LDMOS transistorRev. 02 4 February 2010 Product data sheet1. Product profile1.1 General descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.Table 1. Application information Mode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 108 50 1000 26 75pulsed RF 225 50 1200 24 71CAUTIONT

 9.2. Size:331K  philips
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BLF571

BLF573; BLF573SHF / VHF power LDMOS transistorRev. 3 8 July 2010 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.Table 1. Production test informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 300 27.2

 9.3. Size:85K  philips
blf573s.pdfpdf_icon

BLF571

BLF573SHF / VHF power LDMOS transistorRev. 02 17 February 2009 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientificand medical applications in the HF to 500 MHz band.Table 1. Production test informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 300 27.2 70

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HGB039N12S | FDD9407-F085 | CHM4955JGP | SML80B16F | TPH4R008NH | ES6U2 | SI5415AEDU

 

 
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