Справочник MOSFET. BLF573

 

BLF573 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLF573
   Тип транзистора: LDMOS
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 42 A
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: SOT502A
 

 Аналог (замена) для BLF573

   - подбор ⓘ MOSFET транзистора по параметрам

 

BLF573 Datasheet (PDF)

 ..1. Size:331K  philips
blf573 blf573s.pdfpdf_icon

BLF573

BLF573; BLF573SHF / VHF power LDMOS transistorRev. 3 8 July 2010 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.Table 1. Production test informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 300 27.2

 0.1. Size:85K  philips
blf573s.pdfpdf_icon

BLF573

BLF573SHF / VHF power LDMOS transistorRev. 02 17 February 2009 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientificand medical applications in the HF to 500 MHz band.Table 1. Production test informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 300 27.2 70

 9.1. Size:320K  philips
blf578.pdfpdf_icon

BLF573

BLF578Power LDMOS transistorRev. 02 4 February 2010 Product data sheet1. Product profile1.1 General descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.Table 1. Application information Mode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 108 50 1000 26 75pulsed RF 225 50 1200 24 71CAUTIONT

 9.2. Size:105K  philips
blf571.pdfpdf_icon

BLF573

BLF571HF / VHF power LDMOS transistorRev. 02 24 February 2009 Product data sheet1. Product profile1.1 General descriptionA 20 W LDMOS RF transistor for broadcast applications and industrial applications in theHF and VHF band.Table 1. Production test performanceMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 20 27.5 70CAUTIONThis device is sensitive t

Другие MOSFET... BLF3G21-6 , BLF404 , BLF521 , BLF542 , BLF544 , BLF546 , BLF548 , BLF571 , IRF730 , BLF573S , BLF574 , BLF578 , BLF578XR , BLF642 , BLF645 , BLF647 , BLF6G10-135RN .

History: AP05N50H-HF | DH025N04E | ZVP3306A | 2SK3878 | IRF840AL | ZVP4424A

 

 
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