Справочник MOSFET. BLF578

 

BLF578 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLF578
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1000 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 88 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: SOT539A

 Аналог (замена) для BLF578

 

 

BLF578 Datasheet (PDF)

 ..1. Size:320K  philips
blf578.pdf

BLF578
BLF578

BLF578Power LDMOS transistorRev. 02 4 February 2010 Product data sheet1. Product profile1.1 General descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.Table 1. Application information Mode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 108 50 1000 26 75pulsed RF 225 50 1200 24 71CAUTIONT

 0.1. Size:314K  nxp
blf578xr blf578xrs.pdf

BLF578
BLF578

BLF578XR; BLF578XRSPower LDMOS transistorRev. 4 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applic

 9.1. Size:105K  philips
blf571.pdf

BLF578
BLF578

BLF571HF / VHF power LDMOS transistorRev. 02 24 February 2009 Product data sheet1. Product profile1.1 General descriptionA 20 W LDMOS RF transistor for broadcast applications and industrial applications in theHF and VHF band.Table 1. Production test performanceMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 20 27.5 70CAUTIONThis device is sensitive t

 9.2. Size:331K  philips
blf573 blf573s.pdf

BLF578
BLF578

BLF573; BLF573SHF / VHF power LDMOS transistorRev. 3 8 July 2010 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.Table 1. Production test informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 300 27.2

 9.3. Size:85K  philips
blf573s.pdf

BLF578
BLF578

BLF573SHF / VHF power LDMOS transistorRev. 02 17 February 2009 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientificand medical applications in the HF to 500 MHz band.Table 1. Production test informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 300 27.2 70

 9.4. Size:171K  philips
blf574.pdf

BLF578
BLF578

BLF574HF / VHF power LDMOS transistorRev. 02 24 February 2009 Product data sheet1. Product profile1.1 General descriptionA 500 W to 600 W LDMOS power transistor for broadcast applications and industrialapplications in the HF to 500 MHz band.Table 1. Application informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 500 26.5 70108 50 600 27.5 73CA

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