BLF6G22-180RN - Даташиты. Аналоги. Основные параметры

BLF6G22-180RN;BLF6G22LS-180RNPower LDMOS transistorRev. 01 20 November 2008 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

BLF6G22-180PN; BLF6G22LS-180PNPower LDMOS transistorRev. 04 4 March 2010 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(A

BLF6G22-45Power LDMOS transistorRev. 02 21 April 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MHz) (

BLF6G22S-45Power LDMOS transistorRev. 02 17 April 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MHz)

BLF6G22L-40P; BLF6G22LS-40PPower LDMOS transistorRev. 1 22 September 2011 Product data sheet1. Product profile1.1 General descriptionLDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

BLF6G22LS-130Power LDMOS transistorRev. 01 23 May 2008 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

BLF6G22LS-75Power LDMOS transistorRev. 02 14 April 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

BLF6G22L-40BNPower LDMOS transistorRev. 1 30 August 2010 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MH

BLF6G22LS-100Power LDMOS transistorRev. 3 12 November 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 A