BLF6G22LS-130. Аналоги и основные параметры

Наименование производителя: BLF6G22LS-130

Тип транзистора: LDMOS

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 130 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 28 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 34 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.085 Ohm

Тип корпуса: SOT502B

Аналог (замена) для BLF6G22LS-130

- подборⓘ MOSFET транзистора по параметрам

 

BLF6G22LS-130 даташит

 ..1. Size:80K  nxp
 blf6g22ls-130.pdf pdf_icon

BLF6G22LS-130

BLF6G22LS-130 Power LDMOS transistor Rev. 01 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

 3.1. Size:150K  philips
 blf6g22-180pn blf6g22ls-180pn.pdf pdf_icon

BLF6G22LS-130

BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 4 March 2010 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(A

 3.2. Size:276K  nxp
 blf6g22ls-100.pdf pdf_icon

BLF6G22LS-130

BLF6G22LS-100 Power LDMOS transistor Rev. 3 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 A

 4.1. Size:135K  nxp
 blf6g22ls-75.pdf pdf_icon

BLF6G22LS-130

BLF6G22LS-75 Power LDMOS transistor Rev. 02 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BLF6G20S-45, BLF6G21-10G, BLF6G22-180PN, BLF6G22-180RN, BLF6G22-45, BLF6G22L-40BN, BLF6G22L-40P, BLF6G22LS-100, 8205A, BLF6G22LS-180PN, BLF6G22LS-180RN, BLF6G22LS-40P, BLF6G22LS-75, BLF6G22S-45, BLF6G27-10, BLF6G27-100, BLF6G27-10G