BLF6G22LS-75 - аналоги, даташиты, параметры транзистора

BLF6G22LS-75 Datasheet (PDF)

..1. Size:135K nxp
blf6g22ls-75.pdf pdf_icon

BLF6G22LS-75Power LDMOS transistorRev. 02 14 April 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

4.1. Size:150K philips
blf6g22-180pn blf6g22ls-180pn.pdf pdf_icon

BLF6G22-180PN; BLF6G22LS-180PNPower LDMOS transistorRev. 04 4 March 2010 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(A

4.2. Size:80K nxp
blf6g22ls-130.pdf pdf_icon

BLF6G22LS-130Power LDMOS transistorRev. 01 23 May 2008 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

4.3. Size:276K nxp
blf6g22ls-100.pdf pdf_icon

BLF6G22LS-100Power LDMOS transistorRev. 3 12 November 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 A

Другие MOSFET... BLF6G22-45 , BLF6G22L-40BN , BLF6G22L-40P , BLF6G22LS-100 , BLF6G22LS-130 , BLF6G22LS-180PN , BLF6G22LS-180RN , BLF6G22LS-40P , K3569 , BLF6G22S-45 , BLF6G27-10 , BLF6G27-100 , BLF6G27-10G , BLF6G27-135 , BLF6G27-45 , BLF6G27-75 , BLF6G27L-40P .