BLF6G27-10. Аналоги и основные параметры

Наименование производителя: BLF6G27-10

Тип транзистора: LDMOS

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 10 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 28 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.256 Ohm

Тип корпуса: SOT975B

Аналог (замена) для BLF6G27-10

- подборⓘ MOSFET транзистора по параметрам

 

BLF6G27-10 даташит

 ..1. Size:276K  nxp
blf6g27-10 blf6g27-10g.pdfpdf_icon

BLF6G27-10

BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 4 16 December 2014 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation

 0.1. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdfpdf_icon

BLF6G27-10

BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D

 5.1. Size:92K  philips
blf6g27-135 blf6g27ls-135.pdfpdf_icon

BLF6G27-10

BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p)

 6.1. Size:277K  philips
blf6g27-75 6g27ls-75.pdfpdf_icon

BLF6G27-10

BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(M) Gp D

Другие IGBT... BLF6G22L-40P, BLF6G22LS-100, BLF6G22LS-130, BLF6G22LS-180PN, BLF6G22LS-180RN, BLF6G22LS-40P, BLF6G22LS-75, BLF6G22S-45, 2SK3878, BLF6G27-100, BLF6G27-10G, BLF6G27-135, BLF6G27-45, BLF6G27-75, BLF6G27L-40P, BLF6G27L-50BN, BLF6G27LS-100