BLF6G27L-40P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BLF6G27L-40P
Тип транзистора: LDMOS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.2 A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
Тип корпуса: SOT1121A
Аналог (замена) для BLF6G27L-40P
BLF6G27L-40P Datasheet (PDF)
blf6g27l-40p 27ls-40p 27ls-40pg.pdf
BLF6G27L-40P; BLF6G27LS-40P(G)Power LDMOS transistorRev. 3 14 January 2015 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source
blf6g27l-50bn blf6g27ls-50bn.pdf
BLF6G27L-50BN; BLF6G27LS-50BNPower LDMOS transistorRev. 2 7 April 2011 Product data sheet1. Product profile1.1 General description50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(
blf6g27-100 blf6g27ls-100.pdf
BLF6G27-100; BLF6G27LS-100WiMAX power LDMOS transistorRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25C in a class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D
blf6g27-135 blf6g27ls-135.pdf
BLF6G27-135; BLF6G27LS-135WiMAX power LDMOS transistorRev. 02 26 May 2008 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase =25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) PL(p)
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918