Справочник MOSFET. BLF7G22LS-130

 

BLF7G22LS-130 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLF7G22LS-130
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT502B
     - подбор MOSFET транзистора по параметрам

 

BLF7G22LS-130 Datasheet (PDF)

 3.1. Size:693K  nxp
blf7g22l-100p blf7g22ls-100p.pdfpdf_icon

BLF7G22LS-130

BLF7G22L-100P; BLF7G22LS-100PPower LDMOS transistorRev. 3 2 January 2012 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Test signal f IDq V

 4.1. Size:199K  philips
blf7g22l-200 blf7g22ls-200.pdfpdf_icon

BLF7G22LS-130

BLF7G22L-200; BLF7G22LS-200Power LDMOS transistorRev. 3 1 April 2011 Preliminary data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 6.1. Size:168K  nxp
blf7g22l-130 7g22ls-130.pdfpdf_icon

BLF7G22LS-130

BLF7G22L-130; BLF7G22LS-130Power LDMOS transistorRev. 4 20 January 2011 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f I

 6.2. Size:978K  nxp
blf7g22l-250p 22ls-250p.pdfpdf_icon

BLF7G22LS-130

BLF7G22L-250P; BLF7G22LS-250PPower LDMOS transistorRev. 3 12 July 2013 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f I

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP85U03GMT-HF | MDQ18N50GTP | IRFB3206GPBF | OSG60R108FZF | IXFH24N80P

 

 
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