Справочник MOSFET. BLF7G27L-200PB

 

BLF7G27L-200PB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLF7G27L-200PB
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT1110A

 Аналог (замена) для BLF7G27L-200PB

 

 

BLF7G27L-200PB Datasheet (PDF)

 ..1. Size:300K  nxp
blf7g27l-200pb.pdf

BLF7G27L-200PB
BLF7G27L-200PB

BLF7G27L-200PBPower LDMOS transistorRev. 2 20 February 2012 Product data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV)

 5.1. Size:165K  philips
blf7g27l-100 blf7g27ls-100.pdf

BLF7G27L-200PB
BLF7G27L-200PB

BLF7G27L-100; BLF7G27LS-100Power LDMOS transistorRev. 2 5 April 2011 Preliminary data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 5.2. Size:289K  philips
blf7g27l-75p blf7g27ls-75p.pdf

BLF7G27L-200PB
BLF7G27L-200PB

BLF7G27L-75P; BLF7G27LS-75PPower LDMOS transistorRev. 2 14 July 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq

 5.3. Size:304K  philips
blf7g27l-150p 7g27ls-150p.pdf

BLF7G27L-200PB
BLF7G27L-200PB

BLF7G27L-150P; BLF7G27LS-150PPower LDMOS transistorRev. 1 12 November 2010 Product data sheet1. Product profile1.1 General description150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation

 5.4. Size:273K  nxp
blf7g27l-135.pdf

BLF7G27L-200PB
BLF7G27L-200PB

BLF7G27L-135Power LDMOS transistorRev. 2 26 March 2012 Product data sheet1. Product profile1.1 General description135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) Gp

 5.5. Size:171K  nxp
blf7g27l-140 7g27ls-140.pdf

BLF7G27L-200PB
BLF7G27L-200PB

BLF7G27L-140; BLF7G27LS-140Power LDMOS transistorRev. 3 22 July 2011 Product data sheet1. Product profile1.1 General description140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq

 5.6. Size:972K  nxp
blf7g27l-90p blf7g27ls-90p.pdf

BLF7G27L-200PB
BLF7G27L-200PB

BLF7G27L-90P; BLF7G27LS-90PPower LDMOS transistorRev. 2 10 November 2011 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top