Справочник MOSFET. BLF7G27L-200PB

 

BLF7G27L-200PB Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLF7G27L-200PB
   Тип транзистора: LDMOS
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT1110A
 

 Аналог (замена) для BLF7G27L-200PB

   - подбор ⓘ MOSFET транзистора по параметрам

 

BLF7G27L-200PB Datasheet (PDF)

 ..1. Size:300K  nxp
blf7g27l-200pb.pdfpdf_icon

BLF7G27L-200PB

BLF7G27L-200PBPower LDMOS transistorRev. 2 20 February 2012 Product data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV)

 5.1. Size:165K  philips
blf7g27l-100 blf7g27ls-100.pdfpdf_icon

BLF7G27L-200PB

BLF7G27L-100; BLF7G27LS-100Power LDMOS transistorRev. 2 5 April 2011 Preliminary data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 5.2. Size:289K  philips
blf7g27l-75p blf7g27ls-75p.pdfpdf_icon

BLF7G27L-200PB

BLF7G27L-75P; BLF7G27LS-75PPower LDMOS transistorRev. 2 14 July 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq

 5.3. Size:304K  philips
blf7g27l-150p 7g27ls-150p.pdfpdf_icon

BLF7G27L-200PB

BLF7G27L-150P; BLF7G27LS-150PPower LDMOS transistorRev. 1 12 November 2010 Product data sheet1. Product profile1.1 General description150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation

Другие MOSFET... BLF7G24L-100 , BLF7G24L-140 , BLF7G24LS-100 , BLF7G24LS-140 , BLF7G27L-100 , BLF7G27L-135 , BLF7G27L-140 , BLF7G27L-150P , RU7088R , BLF7G27L-75P , BLF7G27L-90P , BLF7G27LS-100 , BLF7G27LS-140 , BLF7G27LS-150P , BLF7G27LS-200PB , BLF7G27LS-75P , BLF7G27LS-90P .

 

 
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